BSZ067N06LS3GATMA1 N-Channel MOSFET Power Transistor, SuperSO8 Package

  • Serves as an N-channel MOSFET, enabling efficient switching and power management in electronic circuits.
  • Features a low on-resistance, which helps reduce conduction losses and improve overall energy efficiency.
  • Offered in a compact SuperSO8 package, saving valuable board space in dense PCB layouts.
  • Well-suited for use in DC-DC converters, where it can help optimize power delivery and minimize heat generation.
  • Manufactured to meet rigorous quality standards, supporting dependable operation in demanding environments.
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BSZ067N06LS3GATMA1 Overview

The BSZ067N06LS3GATMA1 is a high-performance N-channel MOSFET designed for demanding power management and switching applications. Leveraging advanced trench MOSFET technology, this device achieves a low on-state resistance and fast switching behavior, making it ideal for efficient power conversion in industrial and automotive electronics. Its robust design ensures reliable operation under high current and voltage conditions, while the compact SuperSO8 package supports space-constrained layouts. With its balance of power efficiency and ruggedness, the BSZ067N06LS3GATMA1 delivers dependable performance for engineers and sourcing specialists seeking optimized solutions. Learn more at IC Manufacturer.

BSZ067N06LS3GATMA1 Technical Specifications

AttributeValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)60V
Continuous Drain Current (ID)Up to 100A (package-limited)
RDS(on) (Max, VGS=10V)6.7 m??
Gate Charge (Qg)Significantly low
TechnologyTrench MOSFET
PackageSuperSO8
PolarityN-Channel
Operating Temperature Rangeÿ55??C to 150??C

BSZ067N06LS3GATMA1 Key Features

  • Ultra-low RDS(on): Enables minimal conduction losses, resulting in higher system efficiency for power conversion and switching.
  • High Current Capability: Supports applications with significant load demands due to its high current handling in the SuperSO8 package.
  • Fast Switching Performance: Low gate charge allows for rapid switching, reducing transition losses and improving overall power management.
  • Robust Thermal Performance: Optimized to operate in wide temperature ranges, enhancing reliability in industrial and automotive environments.

BSZ067N06LS3GATMA1 Advantages vs Typical Alternatives

This N-channel power MOSFET stands out for its combination of low on-resistance and high current capacity, enabling superior energy efficiency and lower heat generation compared to standard alternatives. Its fast switching properties further reduce power losses, while the SuperSO8 package offers enhanced thermal management and board-space savings. These attributes make it a preferred choice for demanding power and motor control applications.

Typical Applications

  • DC-DC Converters: The device??s low RDS(on) and fast switching make it ideal for high-efficiency DC-DC step-down and step-up converters in industrial power supplies and automotive electronics.
  • Motor Drives: Suitable for low- and medium-voltage motor drive circuits, providing reliable current handling and robust switching performance.
  • Load Switches: Perfect for high-side and low-side load switching, offering low conduction losses and compact integration in power distribution panels.
  • Battery Management Systems: Ensures efficient switching and safety in battery protection and charging circuits within energy storage and e-mobility systems.

BSZ067N06LS3GATMA1 Brand Info

The BSZ067N06LS3GATMA1 reflects its manufacturer??s commitment to high-quality semiconductor devices for industrial and automotive markets. This MOSFET is engineered to deliver reliable switching performance, low losses, and long-term durability. The SuperSO8 package embodies advanced packaging know-how, supporting both high current capability and thermal efficiency. Its integration into power management solutions underscores the manufacturer??s expertise in power semiconductor design and application support.

FAQ

What is the main benefit of using this MOSFET in high-current applications?

The device??s low on-state resistance and high current capacity minimize conduction losses and heat generation, making it highly suitable for power systems requiring efficient energy transfer and reliable operation under heavy loads.

How does the SuperSO8 package enhance the performance of this component?

The SuperSO8 package allows for greater current handling and improved thermal management compared to standard SO8 formats. This enables more compact board layouts while maintaining robust electrical and thermal performance.

Can this MOSFET be used in automotive powertrain or body electronics?

Yes, the combination of rugged design, wide operating temperature range, and high efficiency make it appropriate for automotive applications such as powertrain control, body electronics, and battery management.

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What switching frequency range is supported for efficient operation?

Thanks to its low gate charge and fast switching capabilities, the device supports high switching frequencies, which helps to reduce passive component size and increase power density in converter circuits. Always refer to specific circuit conditions for optimal operation.

Is the device suitable for use in temperature-critical environments?

Engineered for operation from ÿ55??C to 150??C, this MOSFET maintains reliable electrical characteristics under harsh temperature conditions, ensuring stability and performance in industrial and automotive settings.

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