BSZ0506NSATMA1 N-Channel MOSFET Transistor, SOT23 Package

  • Performs efficient switching for power supply circuits, enabling stable voltage control in electronic devices.
  • Features a surface-mount package, which allows for reduced board space and easy integration into compact designs.
  • Suitable for use in battery-powered equipment, supporting longer operational times with reliable performance.
  • Model BSZ0506NSATMA1 is engineered for consistent operation in demanding environments, enhancing system dependability.
  • Manufactured with strict process controls to help ensure product reliability throughout its service life.
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BSZ0506NSATMA1 Overview

The BSZ0506NSATMA1 is a high-performance N-channel MOSFET designed for advanced power management applications. With superior voltage and current handling capabilities, this device delivers efficient switching performance, making it ideal for demanding industrial and commercial environments. Its compact SuperSO8 package supports high-density board layouts, while low on-resistance and robust thermal characteristics enable optimized thermal management. Trusted by engineers and sourcing professionals worldwide, this MOSFET ensures reliability and efficiency in modern electronics designs. For sourcing and technical support, visit IC Manufacturer.

BSZ0506NSATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)60 V
Continuous Drain Current (ID)50 A
RDS(on) (max) @ VGS = 10V5.6 m??
Gate Charge (Qg)17 nC
Power Dissipation (PD)62 W
Package TypeSuperSO8
Operating Temperature Range-55??C to +150??C

BSZ0506NSATMA1 Key Features

  • Low RDS(on): The device offers a maximum on-resistance of 5.6 m?? at VGS = 10V, ensuring minimal conduction losses and improved energy efficiency.
  • High Drain Current Capability: Supports continuous drain current up to 50 A, enabling robust performance in high-current applications.
  • Efficient Switching: With a gate charge of just 17 nC, the MOSFET delivers fast switching speeds, reducing switching losses and supporting high-frequency operation.
  • Thermally Optimized Package: The SuperSO8 package configuration enhances power dissipation (up to 62 W), supporting reliable operation even under demanding thermal conditions.

BSZ0506NSATMA1 Advantages vs Typical Alternatives

This N-channel MOSFET stands out for its low on-resistance and high current rating, which together optimize conduction and minimize energy loss compared to standard alternatives. The enhanced power dissipation and compact SuperSO8 package add to its integration flexibility and reliability, making it a preferred choice for engineers seeking efficiency and dependable performance in power switching circuits.

Typical Applications

  • DC-DC Converters: Used extensively in synchronous buck or boost converters, this device??s low on-resistance and high current capability enable efficient voltage regulation in industrial and communications equipment.
  • Motor Drives: Ideal for motor control designs where high current handling and efficient switching are crucial for optimal motor operation and energy savings.
  • Power Management Modules: Supports power distribution and management in server boards, telecom systems, and industrial automation platforms.
  • Battery Protection Circuits: Suitable for integration into battery-powered systems for safeguarding against overcurrent and enhancing overall circuit reliability.

BSZ0506NSATMA1 Brand Info

The BSZ0506NSATMA1 is an advanced power MOSFET engineered to deliver robust performance in demanding power management applications. Manufactured to strict industry standards, it features a SuperSO8 package for optimal heat dissipation and compact board integration. This device is widely adopted by electronics professionals for its reliability, efficiency, and consistent parameter performance in both industrial and commercial projects.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

The device can withstand a maximum drain-source voltage of 60 V, making it suitable for a wide range of medium-voltage power switching applications in industrial and commercial settings.

How does the low RDS(on) value benefit my design?

With a maximum on-resistance of 5.6 m??, this MOSFET minimizes conduction losses, which translates into higher efficiency and reduced heat generation??critical for energy-sensitive designs and thermal management.

Can this device handle high switching frequencies?

Yes, the low gate charge of 17 nC allows for rapid switching, making this MOSFET an excellent choice for high-frequency circuits such as DC-DC converters and fast switching motor drivers.

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产品中间询盘

What is the advantage of the SuperSO8 package?

The SuperSO8 package provides enhanced power dissipation (up to 62 W) and compact dimensions, enabling higher density layouts without compromising reliability or thermal performance in demanding environments.

Is the BSZ0506NSATMA1 suitable for automotive or industrial use?

With its high current capacity, wide operating temperature range, and reliable performance, this MOSFET is well-suited for robust industrial applications and can be considered for automotive designs where its parameters match system requirements.

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