BSZ034N04LSATMA1 Overview
The BSZ034N04LSATMA1 is a high-performance N-channel MOSFET optimized for low voltage applications where fast switching and high efficiency are essential. Designed for power management and load switching, it delivers low on-state resistance and robust current handling capabilities. This device is well-suited for industrial, computing, and automotive circuits, where compact packaging and thermal performance are critical. Its advanced silicon technology supports reliable and efficient operation, helping engineers achieve compact, durable designs. Learn more at the IC Manufacturer.
BSZ034N04LSATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Product Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 100 A |
| RDS(on) (Max) | 3.4 m?? |
| Gate Threshold Voltage (VGS(th)) | 1 V (min), 2.5 V (max) |
| Power Dissipation (PD) | 150 W |
| Operating Temperature Range | -55??C to +175??C |
| Package / Case | SuperSO8 |
BSZ034N04LSATMA1 Key Features
- Ultra-low RDS(on) of 3.4 m?? minimizes conduction losses, enabling higher efficiency in power conversion stages.
- High continuous drain current capability up to 100 A supports demanding loads and boosts overall power delivery in compact systems.
- Wide operating temperature range ensures reliable performance in harsh industrial and automotive environments.
- Compact SuperSO8 package allows for high-density board layouts and improved thermal handling.
- Low gate threshold voltage supports logic-level drive for easy system integration with modern low-voltage controllers.
BSZ034N04LSATMA1 Advantages vs Typical Alternatives
Compared to typical alternatives, this device excels in power density and efficiency due to its ultra-low on-resistance and high current handling. The robust thermal capability and compact SuperSO8 package simplify thermal management and board design. Its low gate drive requirements offer straightforward integration into modern low-voltage circuits, making it a strong choice for engineers seeking to optimize for space, efficiency, and reliability.
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Typical Applications
- DC-DC converters: The low RDS(on) and high current rating make it ideal for use in high-efficiency synchronous buck or boost converters powering CPUs, FPGAs, or other critical loads.
- Motor control: Suitable for switching and driving motors in industrial automation and automotive applications, thanks to its high current capability and ruggedness.
- Power management modules: Frequently integrated in server, telecom, and power distribution units where low losses and compact footprints are essential.
- Load switching: Used in battery-powered equipment and high-side or low-side switching circuits that require fast response and high efficiency.
BSZ034N04LSATMA1 Brand Info
The BSZ034N04LSATMA1 is part of a leading-edge MOSFET portfolio designed for professional power management and switching applications. This product demonstrates the manufacturer??s commitment to advanced silicon technology, delivering reliable, high-performance devices that meet the rigorous standards of the industrial and automotive sectors. The SuperSO8 package and robust electrical characteristics ensure that it supports demanding designs while maintaining efficiency and durability.
FAQ
What type of power applications can this MOSFET support?
This device is well-suited for use in high-efficiency DC-DC converters, power management modules, and load switching circuits in industrial, server, and automotive systems due to its high current capability and low on-resistance.
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What is the maximum drain-source voltage rating?
The maximum drain-source voltage rating for this MOSFET is 40 V, making it suitable for low-voltage power switching and conversion tasks in a broad range of circuit topologies.
How does the SuperSO8 package benefit thermal management?
The SuperSO8 package offers a compact footprint while supporting high power dissipation, which helps engineers achieve efficient thermal management and allows for higher power density in board designs.
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Is this device compatible with logic-level gate drive?
Yes, its low gate threshold voltage enables operation with logic-level drive signals, simplifying integration into systems using modern low-voltage controllers or microprocessors for gate control.
What environments can this MOSFET operate in?
It is rated for an operating temperature range from -55??C to +175??C, ensuring dependable performance in harsh industrial, automotive, and outdoor applications where temperature extremes are common.
