BSZ011NE2LS5IATMA1 Overview
The BSZ011NE2LS5IATMA1 is a high-performance N-channel MOSFET designed for demanding power management applications in industrial and automotive systems. Engineered for efficiency and fast switching, it offers low RDS(on) and robust thermal performance, making it suitable for high-current circuits and space-constrained PCB layouts. The device’s compact SuperSO8 5×6 package supports efficient heat dissipation while providing reliable electrical characteristics necessary for modern power conversion and switching designs. Sourcing specialists and engineers can rely on its proven performance and consistent quality for scalable, cost-effective solutions. For more details, visit IC Manufacturer.
BSZ011NE2LS5IATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) | 120 A |
| RDS(on) (Max) @ VGS = 4.5V | 1.1 m?? |
| Gate Charge (Qg) | 51 nC |
| Power Dissipation (PD) | 150 W |
| Package / Case | SuperSO8 5×6 |
| Operating Temperature Range | -55??C to 175??C |
| Polarity | N-Channel |
| Mounting Type | Surface Mount |
BSZ011NE2LS5IATMA1 Key Features
- Ultra-low RDS(on): With a maximum on-resistance of 1.1 m?? at VGS = 4.5V, the device minimizes conduction losses, enabling higher system efficiency and reduced heat generation.
- High current capability: Supporting up to 120 A continuous drain current, it is well-suited for power-intensive circuits where robust performance is required.
- Thermal efficiency: The SuperSO8 5×6 package design offers enhanced thermal management, allowing reliable operation under high loads and minimizing the risk of thermal runaway.
- Fast switching: A typical gate charge of 51 nC supports rapid switching transitions, ideal for high-frequency applications and minimizing switching losses.
- Rugged reliability: The wide operating temperature range from -55??C to 175??C ensures stable performance in harsh industrial and automotive environments.
BSZ011NE2LS5IATMA1 Advantages vs Typical Alternatives
This MOSFET stands out with its combination of low RDS(on), high current rating, and efficient thermal performance in a compact SuperSO8 footprint. Compared to conventional alternatives, it offers reduced conduction and switching losses, enabling greater energy savings and reliability. The robust package and high power dissipation capability make it a preferred choice for engineers seeking long-term operational stability and simplified thermal design in critical power applications.
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Typical Applications
- DC-DC converters: The low on-resistance and high current handling make it ideal for synchronous rectification and switching elements in high-efficiency power supplies and voltage regulators.
- Motor control systems: Suitable for automotive and industrial motor drivers where high reliability and low conduction losses are essential.
- Battery management: Used in battery protection and switching circuits for electric vehicles and energy storage systems due to its efficiency and ruggedness.
- Load switching: Optimized for high-current load switching in servers, telecom, and industrial automation platforms, ensuring minimal power loss.
BSZ011NE2LS5IATMA1 Brand Info
The BSZ011NE2LS5IATMA1 is a precision-engineered product from a leading semiconductor manufacturer, designed to address the latest requirements in power management and switching applications. Its integration of advanced MOSFET technology in a SuperSO8 5×6 package reflects a commitment to high performance, reliability, and ease of integration for industrial and automotive designs. This product stands as a testament to the manufacturer’s expertise in delivering robust, application-optimized solutions for engineers and sourcing professionals worldwide.
FAQ
What makes the BSZ011NE2LS5IATMA1 suitable for high-efficiency power designs?
Its ultra-low on-resistance (RDS(on)) and high current capability help minimize power losses during operation. Combined with fast switching and excellent thermal performance, these characteristics support the design of highly efficient power conversion systems in compact layouts.
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Can this MOSFET be used in automotive environments?
Yes, the device??s wide operating temperature range (from -55??C to 175??C) and high reliability make it an appropriate choice for automotive power management, including electric vehicle battery protection and motor control applications.
What are the key thermal management benefits of the BSZ011NE2LS5IATMA1 package?
The SuperSO8 5×6 package enables superior heat dissipation, supporting a high power dissipation rating. This helps maintain device reliability and performance even under sustained high-load or high-frequency operation, reducing the risk of overheating.
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Is this product suitable for surface mount assembly?
Yes, it is specifically designed for surface mount technology, facilitating automated assembly and compact PCB designs. This allows for efficient integration in mass production environments common in industrial and automotive sectors.
How does the gate charge specification impact circuit performance?
The moderate gate charge (51 nC) enables fast switching speeds, which reduces switching losses and supports high-frequency operation. This is especially beneficial in DC-DC converters and other high-speed switching circuits where efficiency is crucial.
