BSS123NH6433XTMA1 Overview
The BSS123NH6433XTMA1 is an industrial-grade N-channel MOSFET designed for efficient switching and amplification tasks in compact electronic circuits. Featuring robust performance characteristics and a small SOT-23 package, this device is engineered to deliver reliable operation in demanding environments. Its low on-resistance and high-speed switching capability make it an ideal solution for load switching, level shifting, and power management applications. With its combination of efficiency and versatility, the BSS123NH6433XTMA1 is well-suited for both new designs and drop-in replacements in existing systems. For more information, visit IC Manufacturer.
BSS123NH6433XTMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Package / Case | SOT-23 |
| Drain-Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Id) | 170 mA |
| Rds(on) (Max) | 10 ?? |
| Gate Threshold Voltage (Vgs(th)) | 1 V (Min) |
| Operating Temperature Range | -55??C to +150??C |
| Polarity | N-Channel |
| Mounting Type | Surface Mount |
BSS123NH6433XTMA1 Key Features
- Low on-resistance enables efficient switching with minimal power loss, benefiting overall system energy consumption.
- High drain-source voltage rating of 100 V allows safe operation in circuits requiring significant voltage tolerance.
- Compact SOT-23 package supports high-density PCB layouts, ideal for space-limited designs.
- Wide operating temperature range ensures reliable function in both industrial and consumer environments.
BSS123NH6433XTMA1 Advantages vs Typical Alternatives
Compared to standard N-channel MOSFETs, this device stands out due to its low Rds(on) and high voltage capability within a small SOT-23 footprint. These characteristics support efficient switching and reliable operation at elevated temperatures, making it a preferred choice for power management and signal-level applications demanding compactness and robustness.
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Typical Applications
- Load switching in industrial automation equipment, where compact, efficient, and reliable MOSFETs are essential for controlling power distribution across multiple subsystems.
- Level shifting in low- and high-voltage signal interfacing, enabling seamless communication between logic circuits with differing voltage domains.
- Power management circuits in consumer and industrial electronics, optimizing energy usage while maintaining device longevity.
- General-purpose switching tasks in embedded systems, supporting flexible design integration and fast prototyping cycles.
BSS123NH6433XTMA1 Brand Info
The BSS123NH6433XTMA1 is part of a trusted line of discrete semiconductor devices recognized for their reliability and integration-ready form factors. As a surface-mount N-channel MOSFET, it is engineered to meet the needs of modern electronics designers seeking consistent performance and ease of assembly. Its availability from reputable suppliers and alignment with industry standards further enhance its appeal for a broad range of commercial and industrial applications.
FAQ
What is the maximum voltage that can be applied between drain and source?
The device supports a maximum drain-source voltage of 100 V, making it suitable for applications where higher voltage tolerance is required without sacrificing switching efficiency or compactness.
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What type of applications is this MOSFET most suitable for?
This transistor is commonly used in load switching, signal level shifting, and power management circuits, particularly where board space is limited and efficient switching performance is a priority.
How does the SOT-23 package benefit designers?
The SOT-23 surface-mount package allows for high-density PCB layouts, reducing the overall size of the end product. It also facilitates automated pick-and-place assembly for streamlined manufacturing processes.
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What is the operating temperature range for reliable use?
The component is specified for operation from -55??C to +150??C, ensuring dependable performance in harsh industrial and demanding consumer environments alike.
How does the low Rds(on) value improve efficiency?
A low Rds(on) value minimizes conduction losses during switching, which reduces heat generation and improves overall energy efficiency in the application circuit. This advantage is particularly significant in battery-powered or energy-conscious designs.
