BSC160N10NS3GATMA1 Overview
The BSC160N10NS3GATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and automotive applications. With robust power handling, low on-resistance, and high-speed switching capabilities, this device offers excellent efficiency and reliability in power management circuits. It is ideal for engineers seeking a component that delivers consistent performance in environments where thermal management and fast response are critical. Its compact footprint and advanced silicon technology ensure seamless integration in modern electronic assemblies. For more details, visit IC Manufacturer.
BSC160N10NS3GATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 100 V |
| Drain Current (Id) | 160 A |
| Rds(on) (Max) | 3.2 mOhm |
| Package / Case | PG-TDSON-8 |
| Mounting Type | Surface Mount (SMD/SMT) |
| Operating Temperature Range | -55??C to +175??C |
| Gate Charge (Qg) | 128 nC |
| Polarity | N-Channel |
BSC160N10NS3GATMA1 Key Features
- High Current Handling: Supports up to 160A drain current, enabling robust power delivery for high-load applications such as motor drives and power supplies.
- Low On-Resistance: With a maximum Rds(on) of 3.2 mOhm, this device minimizes conduction losses, improving overall energy efficiency in circuit designs.
- Wide Temperature Range: Operates reliably from -55??C to +175??C, making it suitable for harsh automotive and industrial environments.
- Compact Package: The PG-TDSON-8 surface mount package allows for high-density board layouts, optimizing space in advanced electronic systems.
BSC160N10NS3GATMA1 Advantages vs Typical Alternatives
This MOSFET stands out due to its combination of high current capability, low on-resistance, and wide operating temperature range. Compared to typical alternatives, its efficient switching performance and compact SMD packaging allow for reduced thermal stress and higher reliability in demanding applications. These related function words underscore its suitability for engineers prioritizing efficiency and robust operation.
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Typical Applications
- High-Efficiency Power Management: Ideal for use in switch-mode power supplies and DC-DC converters, where low Rds(on) and high current handling are essential for minimizing losses and maximizing system efficiency.
- Automotive Electronic Control Units: Provides reliable switching for applications such as electric power steering, battery management, and safety systems.
- Industrial Motor Drives: Suitable for driving large inductive loads, enabling precise control and high efficiency in industrial automation and robotics.
- Battery Protection and Management: Used in battery-powered devices and energy storage systems to ensure safe and efficient power delivery under varying load conditions.
BSC160N10NS3GATMA1 Brand Info
The BSC160N10NS3GATMA1 is part of a trusted portfolio of advanced power semiconductors, designed with the latest silicon technology to address the rigorous demands of industrial and automotive sectors. This MOSFET reflects the brand??s commitment to quality, reliability, and innovative design, supporting engineers and system designers in creating efficient and durable electronic solutions. Its proven performance and robust feature set make it a preferred choice for high-current switching and power management applications.
FAQ
What is the maximum drain-source voltage supported by this MOSFET?
The device supports a maximum drain-source voltage of 100 V, making it suitable for applications that require robust voltage tolerance and safe operation across a wide range of power circuit topologies.
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Can this component be used in high-temperature environments?
Yes, it is rated for operation from -55??C up to +175??C, ensuring reliable performance in environments where temperature extremes are common, such as automotive engine compartments or industrial power systems.
What package type does the BSC160N10NS3GATMA1 utilize?
The MOSFET comes in a compact PG-TDSON-8 package, which is ideal for surface-mount assembly and enables high-density circuit board layouts required in modern electronics manufacturing.
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How does the low Rds(on) value benefit my design?
A low Rds(on) of 3.2 mOhm minimizes conduction losses during operation, increasing energy efficiency and reducing heat generation, which is critical for power supplies, motor drives, and battery-powered systems.
Is this MOSFET suitable for use in automotive applications?
Absolutely. Its wide operating temperature range, high current capability, and robust package make it particularly well-suited for use in automotive systems such as electronic control units, battery management, and high-power switching functions.
