BSC110N15NS5ATMA1 N-Channel MOSFET, Power Transistor, TO-220 Package

  • Acts as an N-channel MOSFET, enabling efficient switching or amplification in electronic circuits.
  • Features a maximum voltage rating of 150V, supporting use in high-voltage applications where safety is critical.
  • Compact SuperSO8 package allows for reduced board space and streamlined PCB layouts in dense designs.
  • Ideal for power management modules, helping regulate and control electrical flow in industrial equipment.
  • Manufactured to meet standard device reliability benchmarks, supporting stable performance over time.
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BSC110N15NS5ATMA1 Overview

The BSC110N15NS5ATMA1 is a high-performance N-channel MOSFET designed for industrial and power management applications. Engineered to deliver low on-resistance and efficient switching, this device supports robust operation in demanding environments. Its compact SuperSO8 package enables high-density board layouts, making it suitable for modern power electronics. With advanced silicon technology, the BSC110N15NS5ATMA1 offers reliable performance and thermal efficiency, optimizing circuit design for industrial engineers and sourcing professionals. Discover more at IC Manufacturer.

BSC110N15NS5ATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)150 V
Continuous Drain Current (ID)110 A
On-State Resistance (RDS(on))2.4 m??
Gate Threshold Voltage (VGS(th))2 V to 4 V
Package TypeSuperSO8
Operating Temperature Range-55??C to 150??C
Mounting StyleSurface Mount

BSC110N15NS5ATMA1 Key Features

  • Ultra-low on-resistance of 2.4 m?? minimizes conduction losses, improving overall power efficiency in demanding applications.
  • High current handling capability up to 110 A supports power-dense designs, enabling compact solutions without sacrificing performance.
  • Robust 150 V drain-source voltage rating ensures safe operation in high-voltage circuits, increasing reliability for industrial usage.
  • Surface mount SuperSO8 package allows for automated assembly and efficient thermal management, reducing manufacturing complexity.

BSC110N15NS5ATMA1 Advantages vs Typical Alternatives

Compared to standard MOSFETs, this device provides significantly lower on-state resistance and higher current capability, directly supporting more efficient switching and reduced thermal stress. Its advanced packaging and voltage rating enhance integration in industrial and power management systems, offering reliable, energy-efficient performance for mission-critical designs.

Typical Applications

  • High-efficiency switching power supplies: The low RDS(on) and high current capability make it ideal for synchronous rectification and primary side switching in power conversion topologies, ensuring minimal losses and compact designs.
  • Motor drive circuits: Suitable for industrial and automation motor controllers where robust voltage and current handling improve system durability.
  • DC-DC converters: Facilitates high-frequency switching with low losses, benefiting telecom and server power architectures.
  • Battery management systems: Supports safe, efficient power switching and protection in larger battery arrays and energy storage systems.

BSC110N15NS5ATMA1 Brand Info

This MOSFET is part of a well-established industrial semiconductor portfolio, recognized for consistent quality and performance in demanding applications. The product combines advanced silicon process technology with a compact SuperSO8 footprint, offering enhanced efficiency and thermal performance for modern power electronics. Trusted by design engineers and procurement teams, this device upholds rigorous standards for reliability and integration flexibility.

FAQ

What makes the BSC110N15NS5ATMA1 suitable for high-current industrial applications?

Its ability to handle continuous drain currents up to 110 A, combined with a very low on-resistance, ensures minimal power loss and heat generation. This supports reliable operation in high-power environments, such as industrial drives and power supplies.

How does the SuperSO8 package benefit board design and assembly?

The compact SuperSO8 package enables high component density, reducing PCB space requirements. Its surface mount format supports automated assembly processes and efficient heat dissipation, leading to simplified manufacturing and improved reliability.

Is this device appropriate for use in high-voltage circuits?

With a drain-source voltage rating of 150 V, it safely withstands higher voltages found in industrial and telecom power systems. This makes it a strong choice for circuits where robust isolation and voltage tolerance are essential.

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Can the BSC110N15NS5ATMA1 be used in temperature-sensitive environments?

Yes, its specified operating temperature range from -55??C up to 150??C allows deployment in both harsh industrial and automotive environments, maintaining stable electrical characteristics under thermal stress.

What types of applications benefit most from the low RDS(on) of this MOSFET?

Applications such as synchronous rectifiers, DC-DC converters, and battery management systems benefit from the low on-resistance. Reduced conduction losses translate to higher efficiency, less heat, and more compact, cost-effective power system designs.

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