BSC094N06LS5ATMA1 Overview
The BSC094N06LS5ATMA1 is a high-performance N-channel MOSFET designed for power management and switching applications in industrial and automotive electronics. Featuring low on-resistance and robust current handling, this device enables improved energy efficiency and thermal management in demanding environments. Its 60V drain-source voltage rating and logic-level gate drive compatibility make it suitable for a wide range of modern circuit designs. With a compact package and optimized switching characteristics, the product delivers enhanced reliability and operational flexibility for engineers and sourcing specialists seeking efficient power component solutions. For further details, visit IC Manufacturer.
BSC094N06LS5ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 38 A |
| On-Resistance (RDS(on)) | 9.4 m?? |
| Gate Threshold Voltage (VGS(th)) | 1 V to 2.5 V |
| Power Dissipation (PD) | ~2.5 W |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | PG-TSDSON-8 |
| Mounting Style | Surface Mount (SMD/SMT) |
BSC094N06LS5ATMA1 Key Features
- Low on-resistance (RDS(on)) minimizes conduction losses, enhancing system efficiency and reducing heat generation in high-current applications.
- Logic-level gate drive compatibility allows direct interfacing with microcontrollers or logic ICs, simplifying circuit design and reducing the need for additional gate drivers.
- High current capability (up to 38 A) ensures reliable operation in demanding power switching scenarios, supporting robust design requirements.
- Compact PG-TSDSON-8 package enables high-density PCB layouts, optimizing board space and offering thermal advantages for industrial systems.
BSC094N06LS5ATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET stands out with its combination of low on-resistance and high current handling, enabling superior efficiency and reduced power loss compared to many standard transistors. The logic-level gate drive feature further streamlines integration into control systems, supporting compact, reliable, and energy-efficient end products for industrial and automotive applications.
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Typical Applications
- Power management modules: Ideally suited for DC-DC converters, battery management, and load switching circuits where low on-resistance and high efficiency are critical for operational stability and reduced energy loss.
- Motor control systems: Frequently employed in automotive and industrial motor drivers, delivering reliable switching performance and robust thermal handling.
- Switching regulators: Supports use in synchronous rectification and switching power supply topologies, enhancing conversion efficiency and minimizing heat generation.
- General purpose switching: Suitable for diverse switching applications across industrial and consumer electronics that require compact, surface-mount power devices.
BSC094N06LS5ATMA1 Brand Info
The BSC094N06LS5ATMA1 is part of a reputable family of high-efficiency MOSFETs known for their robust performance in challenging environments. This specific model is engineered to satisfy the stringent requirements of industrial and automotive sectors, offering a balance of low conduction losses, high current capability, and logic-level gate operation. Its adoption across various platforms highlights its reliability and effectiveness in demanding power switching and management roles.
FAQ
What package type is used for the BSC094N06LS5ATMA1 MOSFET?
This device utilizes the PG-TSDSON-8 package, which is a compact, surface-mount package designed for high-density PCB layouts and efficient thermal management in power applications.
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Can this MOSFET handle logic-level gate drive voltages?
Yes, the BSC094N06LS5ATMA1 is compatible with logic-level gate drive, allowing it to be controlled directly by standard logic circuits or microcontrollers without the need for additional gate driver components.
What is the maximum continuous drain current rating for this device?
The MOSFET is rated for a continuous drain current of up to 38 A, making it suitable for high-current switching and power management tasks in industrial and automotive settings.
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Is this device suitable for automotive applications?
Absolutely. The combination of a 60 V drain-source voltage rating, low on-resistance, and high current capability makes it well-suited for automotive powertrain, body electronics, and motor control applications.
What is the typical on-resistance and why is it important?
The typical on-resistance is 9.4 m??, which is significant because lower RDS(on) values minimize conduction losses, improve overall efficiency, and reduce heat generation, which is critical in high-power designs.
