BSC093N04LSGATMA1 Overview
The BSC093N04LSGATMA1 is an advanced N-channel MOSFET designed for demanding power management and switching applications. With a low RDS(on) and robust voltage handling, it enables efficient energy conversion and high-speed operation. This MOSFET is optimized for use in industrial, automotive, and communication systems, offering reliable performance in compact designs. Its SMD package ensures easy integration into modern PCBs, supporting high-density layouts. Trusted by engineers globally, this device combines power efficiency with operational stability, making it a preferred choice for high-performance electronic systems. For more detailed sourcing, visit IC Manufacturer.
BSC093N04LSGATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Id) | 100 A |
| RDS(on) (Max) | 9.3 m?? |
| Gate-Source Voltage (Vgs) | ?I20 V |
| Power Dissipation (Pd) | 136 W |
| Package / Case | SuperSO8 |
| Mounting Type | Surface Mount (SMD) |
BSC093N04LSGATMA1 Key Features
- Ultra-low RDS(on) value provides minimized conduction losses, resulting in higher system efficiency for power-sensitive applications.
- High continuous drain current capability supports demanding load profiles, making it ideal for applications with significant current requirements.
- Robust voltage handling and power dissipation ratings enhance reliability in harsh operating environments and thermal management scenarios.
- Space-saving SuperSO8 package enables compact PCB layouts and straightforward surface-mount assembly for high-density designs.
BSC093N04LSGATMA1 Advantages vs Typical Alternatives
Compared to typical alternatives, this MOSFET stands out due to its exceptionally low on-resistance and high current handling, which contribute to lower thermal losses and improved energy efficiency. The combination of a compact SMD package and robust electrical characteristics ensures reliable operation and streamlined integration for high-performance applications. These advantages support higher design flexibility and system longevity.
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Typical Applications
- Power management modules in industrial systems benefit from the device??s low RDS(on) and high current capability, enabling efficient energy delivery and heat reduction even under continuous operation.
- Automotive electronic control units (ECUs) leverage this MOSFET for fast switching and robust voltage endurance, ensuring reliable functionality in demanding vehicular environments.
- Switching power supplies and DC-DC converters utilize its high efficiency and power dissipation strengths to achieve compact yet reliable voltage regulation solutions.
- Communication infrastructure equipment incorporates this part for stable, high-current switching, supporting uninterrupted operation in networks and base stations.
BSC093N04LSGATMA1 Brand Info
The BSC093N04LSGATMA1 is manufactured by a leading global semiconductor provider known for innovative power electronics solutions. This N-channel MOSFET is part of a broad portfolio focused on efficiency, reliability, and ease of integration. Designed to meet the rigorous demands of industrial, automotive, and communication markets, it offers engineers a dependable solution for high-current switching with minimal losses. The SuperSO8 package ensures compatibility with automated assembly, supporting fast time-to-market for advanced electronic systems.
FAQ
What is the maximum drain-source voltage supported by this MOSFET?
The device is rated for a maximum drain-source voltage of 40 V, making it well-suited for low-voltage power switching applications where stability and safety are required.
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Can the BSC093N04LSGATMA1 handle high continuous currents?
Yes, it supports a continuous drain current rating of up to 100 A, allowing it to operate efficiently in circuits with substantial load requirements and heavy-duty switching tasks.
What are the key benefits of the SuperSO8 package for this MOSFET?
The SuperSO8 package offers a compact footprint for high-density board layouts, improves thermal performance, and simplifies the surface-mount assembly process for streamlined production.
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Is this MOSFET suitable for automotive or industrial use?
Absolutely. Its robust ratings for voltage, current, and power dissipation make it a reliable choice for both automotive control units and industrial power management systems requiring high efficiency and durability.
What makes the BSC093N04LSGATMA1 more efficient than standard MOSFETs?
Its ultra-low RDS(on) value significantly reduces conduction losses, resulting in higher overall system efficiency, less heat generation, and greater operational stability compared to typical alternatives.
