BSC070N10NS5ATMA1 N-Channel MOSFET Transistor, 100V, 7m??, SuperSO8 Package

  • Designed as a MOSFET, it efficiently manages high-speed switching tasks in electronic circuits.
  • Features an N-channel configuration, enabling low on-resistance for reduced power loss during operation.
  • Compact SuperSO8 package allows for board-space savings, supporting dense circuit layouts and miniaturized designs.
  • Ideal for use in power management modules, offering improved energy efficiency in consumer and industrial devices.
  • BSC070N10NS5ATMA1 supports stable performance, contributing to reliable operation in demanding environments.
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产品上方询盘

BSC070N10NS5ATMA1 Overview

The BSC070N10NS5ATMA1 is a high-performance N-channel MOSFET optimized for demanding power switching applications. Designed with a low on-state resistance and robust voltage handling, this power transistor meets the needs of modern industrial, automotive, and consumer electronics. Its compact SuperSO8-3 package supports high-density board layouts, while advanced silicon technology ensures reliability and efficiency in fast-switching environments. Engineers seeking enhanced energy efficiency and solid thermal performance will find this device ideal for power management tasks. For more details, visit IC Manufacturer.

BSC070N10NS5ATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Package / CaseSuperSO8-3
Drain-Source Voltage (VDS)100 V
Continuous Drain Current (ID)120 A
RDS(on) (Max)7 m??
Gate Charge (Qg)ÿ
Operating Temperature Rangeÿ
Mounting TypeSurface Mount
PolarityN-Channel

BSC070N10NS5ATMA1 Key Features

  • Low RDS(on): The device features a maximum on-state resistance of 7 m??, minimizing conduction losses and improving overall system efficiency in high-current switching.
  • High Current Capability: With a continuous drain current rating of 120 A, it can handle substantial load currents, making it suitable for power-intensive applications.
  • 100 V Drain-Source Voltage: Ensures safe operation in circuits with higher voltage rails, enhancing design flexibility for engineers.
  • Compact SuperSO8-3 Package: Supports surface mounting, saving valuable PCB space and enabling high-density layouts.
  • Advanced N-Channel Technology: Delivers fast switching performance, aiding in applications where speed and efficiency are critical.

BSC070N10NS5ATMA1 Advantages vs Typical Alternatives

This MOSFET stands out due to its combination of low on-resistance and high current handling, enabling lower power dissipation and greater energy savings versus standard alternatives. The optimized SuperSO8-3 package enhances thermal management and integration, while robust voltage tolerance ensures reliable operation in demanding environments. These related function words highlight its suitability for modern power electronics solutions.

Typical Applications

  • DC-DC Power Conversion: Ideal for synchronous rectification and high-frequency switching in power supply designs, where efficiency and reliability are paramount for industrial and telecom equipment.
  • Motor Drives: Used in inverter stages for motor control, supporting applications that require precise speed and torque regulation under high current loads.
  • Automotive Electronic Control: Suitable for power management and safety-critical circuits in vehicles, including electric drive modules and advanced driver assistance systems.
  • Battery Management Systems: Helps optimize charging and discharging cycles in energy storage and backup systems, improving battery longevity and system safety.

BSC070N10NS5ATMA1 Brand Info

This device is manufactured by a trusted leader in semiconductor technology, known for quality and innovation in power electronics. The BSC070N10NS5ATMA1 exemplifies the brand’s commitment to delivering reliable, efficient, and advanced MOSFET solutions for industrial, automotive, and consumer applications. Customers benefit from proven process technology and comprehensive support, ensuring confidence in every deployment.

FAQ

What makes the BSC070N10NS5ATMA1 suitable for high-current applications?

Its high continuous drain current capability of 120 A allows it to safely and efficiently handle substantial loads, making it a robust choice for power management, switching, and conversion circuits that demand reliable current handling.

Can this MOSFET be used in automotive designs?

Yes, the device??s voltage rating and current-handling attributes make it suitable for a range of automotive applications, such as electronic control units, power distribution, and battery management, where reliability and efficiency are essential.

What are the benefits of the SuperSO8-3 package?

The compact SuperSO8-3 package enables surface mounting, saving PCB space and improving power density. This package type also helps in efficient thermal dissipation, which is crucial in high-power or high-frequency circuits.

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产品中间询盘

Is this device appropriate for fast-switching power supplies?

Absolutely. Its low RDS(on) and N-channel structure support fast switching speeds, reducing switching losses and making it ideal for high-frequency DC-DC converters and synchronous rectification applications.

How does the low on-state resistance improve system performance?

A lower RDS(on) reduces conduction losses during operation, which not only increases overall energy efficiency but also minimizes heat generation, leading to improved reliability and longer component life.

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