BSC070N10NS3GATMA1 Overview
The BSC070N10NS3GATMA1 is a high-performance N-channel MOSFET optimized for demanding power management and switching applications. Designed to deliver low on-resistance and robust switching behavior, this device offers a compact solution for energy-efficient systems in industrial, automotive, and consumer electronics. Its advanced package and proven silicon technology enable reliable operation under stringent conditions, making it an excellent choice for engineers seeking performance and efficiency. For more information, visit IC Manufacturer.
BSC070N10NS3GATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 120 A |
| RDS(on) (Max) | 7.0 m?? |
| Gate Charge (Qg) | 140 nC |
| Package Type | SuperSO8 |
| Power Dissipation (PD) | 300 W |
| Operating Temperature Range | -55??C to +150??C |
BSC070N10NS3GATMA1 Key Features
- Low on-resistance of 7.0 m?? ensures minimal conduction losses, maximizing energy efficiency in power conversion circuits.
- High continuous drain current capability supports heavy load conditions, making it suitable for high-power switching applications.
- SuperSO8 package offers compact form factor while enabling efficient thermal management for reliable operation.
- Wide voltage rating of 100 V enhances versatility in various industrial and automotive applications.
BSC070N10NS3GATMA1 Advantages vs Typical Alternatives
This N-channel MOSFET stands out due to its exceptionally low RDS(on) and high current carrying capacity, which deliver improved efficiency and reduced thermal stress compared to standard alternatives. Its advanced SuperSO8 package further enhances reliability and simplifies integration into dense PCB layouts, supporting robust and long-lasting system designs.
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Typical Applications
- Switching power supplies: Ideal for use in synchronous rectification and primary-side switching due to high efficiency and fast switching characteristics, supporting compact and reliable power supply designs.
- Motor drives: Supports high current loads and efficient switching, making it suitable for DC/AC motor control in industrial automation systems.
- Battery management systems: Offers low conduction losses and high reliability, contributing to safe and efficient battery charging and discharging in energy storage solutions.
- DC-DC converters: Enables compact, thermally efficient converter designs in automotive, telecom, and industrial sectors requiring robust voltage regulation.
BSC070N10NS3GATMA1 Brand Info
The BSC070N10NS3GATMA1 is part of a reputable portfolio of discrete power semiconductors designed for demanding applications. It exemplifies a focus on innovation, quality, and advanced silicon process technologies to deliver superior electrical performance, efficiency, and reliability. This product is engineered to meet the needs of industrial and automotive engineers seeking high-performance solutions in compact packages.
FAQ
What is the maximum voltage rating for the drain-source terminals?
The device supports a maximum drain-source voltage of 100 V, making it suitable for a variety of high-voltage switching and power management applications where robust breakdown characteristics are essential.
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How does the SuperSO8 package benefit thermal management?
The SuperSO8 package is engineered to provide efficient heat dissipation in compact spaces, allowing the MOSFET to handle high power levels without excessive temperature rise. This improves reliability in dense circuit environments.
What is the typical on-resistance value, and why is it important?
The typical on-resistance (RDS(on)) is 7.0 m??. Lower on-resistance values reduce conduction losses, leading to higher system efficiency and less heat generation during operation, which is critical in high-current applications.
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Can this MOSFET be used in automotive environments?
Yes, its wide operating temperature range and high voltage/current ratings make it well-suited for automotive power electronics, including applications such as electric powertrains and battery management systems.
What are the main advantages over standard MOSFETs?
This device offers a combination of low on-resistance, high current capability, and advanced packaging. Together, these features enable improved efficiency, space savings, and robust performance compared to many standard MOSFETs available on the market.
