BSC065N06LS5ATMA1 N-Channel MOSFET, 60V 100A, OptiMOS SOT-23 Package

  • Designed as an N-channel MOSFET, it efficiently switches and controls power in electronic circuits.
  • Low on-resistance minimizes conduction losses, supporting improved energy efficiency in high-current applications.
  • The device features a compact SuperSO8 package, enabling board-space savings for dense circuit layouts.
  • Ideal for use in power management systems, where it assists in rapidly switching loads with minimal heat generation.
  • Manufactured to meet strict industry standards, offering consistent performance and stable operation over time.
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BSC065N06LS5ATMA1 Overview

The BSC065N06LS5ATMA1 is a high-performance N-channel MOSFET designed for efficient switching and power management in demanding industrial and automotive environments. Leveraging advanced silicon technology, this device delivers low RDS(on) and high current handling, optimizing energy efficiency and thermal performance. Its compact footprint and robust construction make it ideal for space-constrained designs requiring reliable operation and fast switching speeds. For sourcing and further details, visit IC Manufacturer.

BSC065N06LS5ATMA1 Technical Specifications

ParameterValue
Transistor TypeN-Channel MOSFET
Drain-Source Voltage (VDS)60 V
Continuous Drain Current (ID)100 A
RDS(on) (max)6.5 m??
Gate Threshold Voltage (VGS(th))1.5 V ÿ 2.5 V
PackageSuperSO8
Operating Temperature Range-55??C to 150??C
Mounting TypeSurface Mount

BSC065N06LS5ATMA1 Key Features

  • Ultra-low RDS(on) enables highly efficient power conversion, minimizing conduction losses and supporting cooler operation in high-current circuits.
  • High continuous drain current rating allows for robust handling of demanding load conditions, making it suitable for applications with substantial power requirements.
  • Advanced SuperSO8 package offers a compact footprint, facilitating high-density PCB layouts and enhanced thermal management through optimized heat dissipation.
  • Wide operating temperature range ensures reliable performance in both automotive and industrial environments, supporting stringent application standards.

BSC065N06LS5ATMA1 Advantages vs Typical Alternatives

Compared to typical N-channel MOSFETs, this device offers a notably lower RDS(on) and higher current capacity, resulting in reduced power losses and improved efficiency. Its advanced packaging and wide operating temperature range further enhance reliability and ease of integration, particularly in applications where space and thermal constraints are critical. These advantages deliver measurable performance benefits for designers seeking robust solutions.

Typical Applications

  • DC-DC converters in automotive powertrain and infotainment systems, where high efficiency and thermal reliability are essential for system stability and longevity.
  • Motor drives for industrial automation, leveraging the device??s high current handling to ensure precise and responsive operation in demanding environments.
  • Switching power supplies for telecommunications, benefiting from the combination of low conduction losses and compact packaging for dense board layouts.
  • Load switching in battery management systems, where robust performance and low on-resistance contribute to increased energy efficiency and safety.

BSC065N06LS5ATMA1 Brand Info

This N-channel MOSFET is manufactured by a globally recognized leader in semiconductor solutions, ensuring that each unit conforms to rigorous quality standards. The product is engineered for high efficiency, reliability, and ease of integration, reflecting the manufacturer’s focus on innovation in power electronics. Its proven track record in industrial and automotive applications underscores its suitability for mission-critical designs.

FAQ

What is the maximum voltage the device can handle between drain and source?

The maximum drain-source voltage for this MOSFET is 60 V, allowing it to be used in a wide range of medium-voltage power switching applications without risk of breakdown when operated within specified limits.

How does the low RDS(on) value benefit my circuit design?

A low RDS(on) minimizes conduction losses, which translates directly into improved energy efficiency and reduced heat generation. This is especially valuable in high-current designs where thermal management and power efficiency are critical.

Is the device suitable for automotive-grade applications?

Yes, it is suitable for automotive applications thanks to its wide operating temperature range, robust current handling, and compliance with industry reliability standards. This makes it a strong choice for power management and switching roles in automotive systems.

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What is the packaging type and why does it matter?

The SuperSO8 surface-mount package offers a compact footprint, enabling high component density on PCBs and effective heat dissipation. This packaging is favored in modern designs that require both space savings and reliable thermal performance.

Can the device be used in high-frequency switching applications?

Yes, its fast switching characteristics and low gate threshold voltage support efficient operation in high-frequency switching circuits, such as DC-DC converters and motor drives, where precise and rapid switching is essential for overall system efficiency.

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