BSC037N08NS5ATMA1 Overview
The BSC037N08NS5ATMA1 is a high-performance N-channel MOSFET optimized for demanding industrial and automotive power management applications. Engineered for efficiency, this device offers low on-resistance and robust switching characteristics, making it suitable for high-current environments. Its small footprint and advanced packaging enable flexible PCB layouts, while its electrical parameters support reliable operation in harsh conditions. By combining efficiency, reliability, and compact integration, the BSC037N08NS5ATMA1 addresses the needs of engineers seeking to optimize system power density and thermal performance. For further details, visit IC Manufacturer.
BSC037N08NS5ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 80 V |
| Continuous Drain Current (ID) | 120 A |
| RDS(on) (Max) | 3.7 m?? |
| Gate Charge (Qg) | 93 nC |
| Package / Case | SuperSO8 |
| Operating Temperature Range | -55??C to +175??C |
| Mounting Type | Surface Mount |
| Polarity | N-Channel |
BSC037N08NS5ATMA1 Key Features
- Ultra-low RDS(on) of just 3.7 m??, enabling minimal conduction losses and higher system efficiency in high-current switching circuits.
- High drain current capability up to 120 A, supporting robust power delivery and increased load handling in demanding applications.
- Supports fast switching with optimized gate charge (Qg), allowing improved dynamic response and reduced switching losses for power converters and motor drives.
- Offered in a compact SuperSO8 package, facilitating high-density PCB layouts and efficient thermal management in space-constrained designs.
BSC037N08NS5ATMA1 Advantages vs Typical Alternatives
Compared to typical power MOSFETs, this device delivers significantly lower on-resistance and higher current handling in a compact form factor. Its enhanced efficiency and thermal performance reduce system losses, while robust reliability supports longer operational life and improved system stability. These characteristics make it a preferred choice for engineers prioritizing power density, performance, and reliability in their power electronics designs.
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Typical Applications
- DC-DC converters: Ideal for use in synchronous rectification and switching stages, improving conversion efficiency and reducing heat generation in industrial and automotive power supplies.
- Motor drives: Suitable for high-current motor control circuits, providing fast switching and low conduction losses for precise speed and torque regulation.
- Battery management systems: Ensures safe and efficient current flow in battery protection and charging circuits, supporting robust operation in electric vehicles and energy storage systems.
- Load switching: Reliable for high-side or low-side load switching in industrial automation, server power architectures, and telecommunications infrastructure.
BSC037N08NS5ATMA1 Brand Info
This product is part of a leading portfolio of power MOSFETs designed to serve modern industrial and automotive markets. The BSC037N08NS5ATMA1 stands out for its combination of low on-resistance, high current capability, and advanced package technology, meeting the evolving demands of energy-efficient and compact electronics. Its proven reliability and performance make it a trusted solution for design engineers seeking to enhance power efficiency and system robustness.
FAQ
What makes the BSC037N08NS5ATMA1 suitable for high-efficiency power applications?
The device offers an exceptionally low on-resistance and optimized gate charge, which directly translate to reduced conduction and switching losses. This efficiency is particularly beneficial in high-frequency power conversion and motor control scenarios.
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Can the BSC037N08NS5ATMA1 operate in harsh temperature environments?
Yes, with an operating temperature range from -55??C to +175??C, this MOSFET is engineered to maintain reliable performance in both extreme cold and elevated ambient conditions, making it suitable for industrial and automotive applications.
What PCB footprint is required for this device?
The BSC037N08NS5ATMA1 is provided in a SuperSO8 package, which is a surface-mount footprint optimized for high power density and efficient heat dissipation in compact circuit layouts.
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Is this MOSFET appropriate for both low-side and high-side switching?
With its high current rating and robust voltage tolerance, the device is versatile enough to be used in both low-side and high-side switching roles, depending on the specific design requirements and gate drive conditions.
What are the main considerations when integrating this MOSFET into a design?
Designers should account for the low RDS(on), thermal management due to high current capability, and appropriate gate drive voltage to leverage the full performance benefits of this component in their application.
