BSC028N06NSATMA1 Power MOSFET, N-Channel, 60V, TO-220 Package

  • Serves as an N-channel MOSFET, enabling efficient switching and power management in electronic circuits.
  • Features a low on-resistance, which helps minimize power loss and heat generation during operation.
  • Comes in a compact package, saving valuable PCB space and supporting higher component density in designs.
  • Suitable for use in battery-powered devices, where energy efficiency and thermal performance are critical.
  • Manufactured to meet standard quality controls, supporting consistent performance and operational reliability.
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BSC028N06NSATMA1 Overview

The BSC028N06NSATMA1 is an N-channel MOSFET optimized for demanding industrial and automotive switching applications. Designed with advanced trench technology, this component delivers low on-resistance and high current handling in a compact, surface-mount package. Its robust construction ensures stable operation across a wide temperature range, making it suitable for power management, DC-DC converters, and load switch circuits. With its efficient performance and reliability, the device provides engineers and sourcing professionals with a versatile solution that streamlines design and boosts end-application efficiency. For procurement or more details, visit IC Manufacturer.

BSC028N06NSATMA1 Technical Specifications

Parameter Value
Transistor Type N-channel MOSFET
Maximum Drain-Source Voltage (VDS) 60 V
Continuous Drain Current (ID) 100 A
RDS(on) (Max) 2.8 m??
Gate Threshold Voltage (VGS(th)) 1.0 V – 3.0 V
Operating Temperature Range -55 ??C to +175 ??C
Package / Case TO-263-3
Mounting Type Surface Mount
Polarity N-Channel

BSC028N06NSATMA1 Key Features

  • Low RDS(on): The device??s maximum on-resistance of just 2.8 m?? minimizes conduction losses, improving overall power efficiency in switched circuits.
  • High Current Capability: Rated for continuous drain current up to 100 A, it supports high-load requirements in demanding environments, reducing the need for parallel devices.
  • Wide Operating Temperature Range: With reliable operation from -55 ??C to +175 ??C, this MOSFET is suitable for both industrial and automotive conditions, maintaining stability under thermal stress.
  • Compact TO-263-3 Package: The surface-mount form factor enables space-saving PCB layouts and facilitates automated assembly processes.
  • Flexible Gate Drive: Its gate threshold voltage range allows compatibility with various logic-level drivers for simplified integration into different architectures.

BSC028N06NSATMA1 Advantages vs Typical Alternatives

The BSC028N06NSATMA1 offers significantly lower on-resistance and higher current handling than many standard MOSFETs in the same voltage class. Its robust thermal performance and compact, surface-mount package enable higher density designs and increased reliability. These related function words highlight its efficiency, making it a preferred choice where power loss and board space are critical.

Typical Applications

  • Switching Power Supplies: This MOSFET is ideal for high-efficiency DC-DC converters and SMPS designs, where low on-resistance and high current capability directly improve conversion efficiency and thermal management.
  • Automotive Load Switches: Suitable for electric vehicle battery management and control modules, ensuring reliable operation even under harsh thermal and electrical conditions.
  • Motor Control: Used in industrial and automotive motor drivers, its ability to handle high currents makes it effective in reducing switching losses and improving system longevity.
  • General-Purpose Switching: Versatile enough for relay replacement, solid-state switching, and high-side or low-side switching in a variety of embedded control systems.

BSC028N06NSATMA1 Brand Info

The BSC028N06NSATMA1 is manufactured by a leading supplier of power semiconductors, recognized for its commitment to innovation and quality in the MOSFET market. This particular product reflects the brand??s expertise in developing efficient, high-performance components tailored for both industrial and automotive environments. Its design ensures compatibility with modern automated production and meets stringent requirements for reliability and thermal endurance, underscoring the manufacturer??s focus on robust, application-ready solutions.

FAQ

What makes the BSC028N06NSATMA1 suitable for high-current applications?

This MOSFET is rated for a continuous drain current of up to 100 A, thanks to its advanced trench technology and low on-resistance. These characteristics enable it to handle substantial power loads without excessive heat generation, making it ideal for power supply and motor control applications.

Can the device operate in harsh industrial or automotive environments?

Yes, it is designed to perform reliably over a wide temperature range from -55 ??C to +175 ??C. Its robust construction and thermal characteristics allow stable operation in environments subject to rapid temperature changes and electrical stress.

What packaging does the BSC028N06NSATMA1 use, and how does it benefit assembly?

The device is supplied in a TO-263-3 surface-mount package, which is well-suited for automated PCB assembly. This compact package supports high-density board layouts and effective thermal dissipation, streamlining the design and manufacturing process.

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Is it compatible with logic-level gate drivers?

With a gate threshold voltage specification of 1.0 V to 3.0 V, the MOSFET can be driven by a variety of logic-level signals. This compatibility simplifies integration with digital controllers or microprocessors in both industrial and automotive systems.

In which types of circuits is this MOSFET most often used?

It is commonly found in DC-DC converters, power supplies, automotive load switches, and motor control circuits. Its low on-resistance and high current capability make it suitable for any application where efficiency and reliability are paramount.

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