BSC015NE2LS5IATMA1 Overview
The BSC015NE2LS5IATMA1 stands out as a high-efficiency N-channel MOSFET engineered for demanding industrial and power management applications. Designed with advanced trench technology, it delivers exceptionally low on-resistance and high current handling within a compact SMD package. This component is ideally suited for applications requiring robust switching performance, thermal efficiency, and reliability. Its electrical characteristics support use in modern circuits where power density and switching speed are critical. Discover more about this innovative device at IC Manufacturer.
BSC015NE2LS5IATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) | 100 A |
| RDS(on) (Max) | 1.5 m?? @ VGS = 10 V |
| Gate Charge (Qg) | 35 nC |
| Package / Case | SuperSO8 |
| Mounting Type | Surface Mount (SMD) |
| Operating Temperature Range | -55??C to 150??C |
BSC015NE2LS5IATMA1 Key Features
- Ultra-low RDS(on) of 1.5 m?? ensures minimal conduction losses, directly improving overall system efficiency in high-current circuits.
- High current capability up to 100 A supports demanding load switching in industrial and server power supplies, boosting reliability under stress.
- Compact SuperSO8 package enables high power density and allows for space-saving PCB layouts, ideal for modern, miniaturized designs.
- Wide operating temperature range from -55??C to 150??C makes it suitable for harsh and thermally challenging environments.
BSC015NE2LS5IATMA1 Advantages vs Typical Alternatives
Compared to typical MOSFETs, this device offers significantly lower on-resistance and higher current handling, which results in reduced heat generation and improved efficiency. The advanced trench technology and compact surface-mount package provide an optimal balance of power density, reliability, and ease of integration for high-performance power management designs.
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Typical Applications
- High-efficiency DC-DC converters: Its low RDS(on) and high current rating make it ideal for power conversion stages in telecom, networking, and industrial equipment, where energy loss must be minimized and thermal performance is critical.
- Motor drives and industrial automation: Suitable for use in motor control circuits requiring fast switching and robust current capabilities.
- Synchronous rectification in switched-mode power supplies: The device??s characteristics support improved switching efficiency in SMPS topologies.
- Battery management systems: Provides reliable switching for protection and charging circuits in energy storage and portable devices.
BSC015NE2LS5IATMA1 Brand Info
This MOSFET is part of a reputable product line known for its advanced trench technology and consistent manufacturing quality. Its SuperSO8 package and optimized silicon structure reflect a commitment to innovation in power semiconductor solutions. The device is trusted by engineers and OEMs for its blend of efficiency, robustness, and long-term reliability, reinforcing the brand??s leadership in the field of industrial and power electronics.
FAQ
What is the maximum drain-source voltage for BSC015NE2LS5IATMA1?
The maximum drain-source voltage is 25 V, making this device suitable for low-voltage, high-current switching applications commonly found in industrial and computing environments.
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How does the low RDS(on) value benefit circuit designers?
The low RDS(on) of 1.5 m?? means that the MOSFET produces less heat and exhibits lower conduction losses during operation. This is especially valuable for high-efficiency power supplies and compact layouts.
What package is used, and why is it advantageous?
The SuperSO8 surface-mount package supports high power density and efficient thermal management. Its compact footprint is ideal for modern PCB designs where space and cooling efficiency are both priorities.
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Can this MOSFET handle high temperatures and harsh environments?
Yes, it operates reliably within a temperature range of -55??C to 150??C. This wide range makes it suitable for use in challenging industrial, automotive, or outdoor environments where temperature fluctuations are common.
Is the device suitable for switching applications with high current demands?
Absolutely. With a continuous drain current rating of 100 A, this MOSFET is designed to manage substantial load currents, making it highly effective in power conversion, motor drive, and similar high-stress applications.
