BSC014N04LSIATMA1 Overview
The BSC014N04LSIATMA1 is a robust N-channel MOSFET designed for demanding industrial and power management applications. Built with advanced silicon technology, it delivers ultra-low on-state resistance, high current handling, and fast switching performance. Its compact footprint and efficient thermal design make it ideal for high-density circuit layouts where efficiency and reliability are critical. This device supports engineers in achieving greater power conversion efficiency and system longevity. For further technical resources and sourcing support, visit IC Manufacturer.
BSC014N04LSIATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | 100 A |
| RDS(on) (Max.) | 1.4 m?? |
| Gate Threshold Voltage (VGS(th)) | 1.0 V ÿ 2.5 V |
| Package | PG-TDSON-8 |
| Operating Temperature Range | -55??C to 175??C |
| Gate Charge (Qg) | 57 nC |
| Polarity | N-Channel |
BSC014N04LSIATMA1 Key Features
- Ultra-low RDS(on) of 1.4 m??, enabling minimal conduction losses and improved energy efficiency in switching applications.
- High continuous drain current capability of up to 100 A, supporting power-intensive designs and heavy load conditions.
- Compact PG-TDSON-8 package optimizes board space, crucial for high-density assemblies in modern industrial electronics.
- Wide operating temperature range (-55??C to 175??C) enhances reliability for use in harsh environments.
- Fast switching characteristics due to optimized gate charge, allowing for high frequency operation and reduced switching losses.
- Low gate threshold voltage expands compatibility with a variety of controller logic levels.
BSC014N04LSIATMA1 Advantages vs Typical Alternatives
This device stands out with its extremely low on-state resistance and high current capability, providing better efficiency and lower heat dissipation compared to typical alternatives. The compact package and high thermal performance simplify integration into space-constrained designs, while the wide operating temperature range ensures reliable operation in industrial and automotive environments. These advantages result in longer system life and reduced power loss.
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Typical Applications
- DC-DC converters: The device??s low RDS(on) and high current rating make it ideal for high-efficiency DC-DC conversion in power management units and server power supplies, reducing conduction losses and enhancing overall system performance.
- Synchronous rectification: Its fast switching speed and low gate charge allow for efficient synchronous rectification, improving efficiency in switched-mode power supplies and reducing heat generation.
- Motor drives: Capable of handling high currents with low losses, it is suitable for use in industrial and automotive motor drive circuits where reliability and efficiency are paramount.
- Battery management systems: The broad operating temperature range and robust design support demanding battery protection and power routing circuits, contributing to safer and longer-lasting battery systems.
BSC014N04LSIATMA1 Brand Info
The BSC014N04LSIATMA1 is engineered to meet the rigorous demands of modern power electronics, combining advanced silicon process technology with a space-saving PG-TDSON-8 package. This product is recognized for its ultra-low on-resistance and superior current handling, supporting applications where efficiency, thermal management, and reliability are essential. It is trusted in a wide range of industrial and automotive systems, reflecting the manufacturer’s commitment to quality and innovation in semiconductor solutions.
FAQ
What are the main benefits of using this MOSFET in power management circuits?
The device??s ultra-low on-resistance and high current capability directly reduce conduction losses and improve system efficiency, which is vital for power management and conversion circuits. Its compact package also helps save valuable PCB space without sacrificing performance or reliability.
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Is the BSC014N04LSIATMA1 suitable for high-frequency switching?
Yes, with its optimized gate charge and fast switching characteristics, this MOSFET supports high-frequency operation, making it suitable for synchronous rectification and other high-speed switching applications where efficiency and fast response are required.
How does the operating temperature range impact application reliability?
The broad temperature range from -55??C to 175??C ensures reliable operation in harsh or fluctuating environments. This makes the device a strong choice for industrial, automotive, and other applications where temperature resilience is necessary for long-term system stability.
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What packaging advantages does the PG-TDSON-8 offer for this MOSFET?
The PG-TDSON-8 package provides a low-profile, compact solution that allows for high-density board layouts, improved thermal management, and easier integration into modern electronic assemblies. This is particularly beneficial in applications with limited space and high thermal demands.
Can this device be used with logic-level gate drive voltages?
Its low gate threshold voltage range supports compatibility with logic-level drive signals, enabling flexible integration with a variety of microcontrollers and gate driver ICs. This feature simplifies design and helps broaden its application in different circuit topologies.
