BSC014N04LSATMA1 Overview
The BSC014N04LSATMA1 is an advanced N-channel MOSFET engineered for low-voltage, high-current switching applications within industrial and automotive systems. This device integrates superior RDS(on) performance with robust current handling, making it ideal for power management and load switching tasks. Designed for efficiency and reliability, it offers minimized conduction losses and thermal resistance, supporting compact, energy-saving circuit designs. Its compact SuperSO8 package enhances board space utilization, while its electrical characteristics ensure consistent operation across demanding environments. For further details, visit IC Manufacturer.
BSC014N04LSATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 40 V |
| Continuous Drain Current (ID) | Up to 100 A |
| RDS(on) (Max at VGS=10V) | 1.4 m?? |
| Gate Threshold Voltage (VGS(th)) | 1.0 V ÿ 3.0 V |
| Package | SuperSO8 |
| Power Dissipation (PD) | Up to 150 W |
| Operating Temperature Range | -55??C to +175??C |
BSC014N04LSATMA1 Key Features
- Ultra-low RDS(on) significantly reduces conduction losses, improving overall energy efficiency in power switching applications.
- High continuous drain current rating enables the device to manage substantial loads, making it suitable for demanding industrial and automotive environments.
- Enhanced thermal performance allows reliable operation in elevated temperature conditions, supporting robust system reliability and longevity.
- Compact SuperSO8 package optimizes PCB space utilization and facilitates high-density circuit designs.
BSC014N04LSATMA1 Advantages vs Typical Alternatives
This MOSFET stands out due to its exceptionally low on-resistance and high current capability compared to standard alternatives. These attributes translate to lower power losses, improved thermal management, and greater overall system efficiency. Its robust design ensures consistent performance, making it advantageous for engineers prioritizing reliability and compact circuit integration in both industrial and automotive applications.
🔥 Best-Selling Products
Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- DC-DC converters: The device??s low RDS(on) and high current rating make it ideal for high-efficiency DC-DC step-down and step-up converters used in industrial power supplies and automotive electronics.
- Motor control: Suitable for controlling motors in automotive and industrial automation systems, where low conduction losses and high current handling are essential.
- Load switching: Well-suited for use as a high-current load switch in battery management systems and general power distribution circuits.
- Synchronous rectification: Used in synchronous rectifier circuits for switched-mode power supplies, improving conversion efficiency and reducing heat dissipation.
BSC014N04LSATMA1 Brand Info
The BSC014N04LSATMA1 is manufactured by a leading provider of advanced power semiconductor solutions, ensuring high quality and reliability. This product reflects a commitment to innovation in MOSFET design, offering industry-leading performance with its ultra-low on-resistance and high current capabilities. The device is widely recognized for delivering consistent results in demanding environments, making it a preferred choice among engineers for critical power management tasks.
FAQ
What is the primary benefit of using this MOSFET in industrial power designs?
The main advantage lies in its ultra-low RDS(on) and high current capability, which together minimize conduction losses and improve overall energy efficiency, making it highly effective for power management in industrial systems.
🌟 Featured Products
“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What package type does this device use, and why is it important?
This MOSFET is housed in a SuperSO8 package, which provides a compact footprint for PCB designs. This is beneficial when board space is limited and high power density is required in the application.
Is the device suitable for automotive applications with harsh environmental conditions?
Yes, the device supports a wide operating temperature range from -55??C to +175??C, making it suitable for automotive environments where components are exposed to extreme temperatures and required to perform reliably.
📩 Contact Us
How does this MOSFET improve system reliability compared to standard alternatives?
With its low on-resistance and robust current handling, the device reduces heat generation and power losses, which helps improve system reliability and extends the lifetime of electronic assemblies.
Can this device be used for both switching and linear mode operations?
While it is primarily optimized for switching applications due to its fast switching characteristics and low RDS(on), it can also be used in certain linear mode operations within specified safe operating area limits, as detailed in its datasheet.
