BSC011N03LSIATMA1 N-Channel MOSFET, 30V, 100A, Power MOSFET, SuperSO8 Package

  • Enables efficient switching and power management, helping to improve energy use in electronic circuits.
  • Low on-resistance supports reduced conduction losses, which is critical for minimizing heat generation.
  • Compact package design allows for board-space savings in dense PCB layouts.
  • Suitable for use in power supply circuits, where stable voltage regulation is essential for device performance.
  • Manufactured to meet standard industry reliability requirements, supporting consistent operation over device lifetime.
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BSC011N03LSIATMA1 Overview

The BSC011N03LSIATMA1 is a highly efficient N-channel MOSFET optimized for low-voltage, high-current switching applications. Featuring advanced silicon technology and a robust SMD package, it is designed for demanding power management tasks in industrial, computing, and automotive systems. Its low on-resistance and high current handling capability ensure minimal energy loss and superior thermal performance, making it a preferred choice for engineers seeking reliable and compact power solutions. For more details, visit IC Manufacturer.

BSC011N03LSIATMA1 Technical Specifications

Parameter Value
Transistor Type N-Channel MOSFET
Drain-Source Voltage (VDS) 30V
Continuous Drain Current (ID) 100A
RDS(on) (Max) 1.1m??
Gate Threshold Voltage (VGS(th)) 1V – 2.5V
Power Dissipation (PD) 150W
Package / Case SuperSO8
Operating Temperature Range -55??C to +150??C

BSC011N03LSIATMA1 Key Features

  • Ultra-low RDS(on) of 1.1m?? maximizes efficiency by minimizing conduction losses, which is critical in high-current applications.
  • High continuous drain current rating of 100A enables robust operation in power-intensive environments, supporting larger loads and greater system flexibility.
  • Wide gate threshold voltage range ensures compatibility with a variety of logic-level drive voltages, simplifying integration into different circuit designs.
  • SuperSO8 package offers excellent thermal performance and compact footprint, facilitating high-density PCB layouts and reliable operation under thermal stress.

BSC011N03LSIATMA1 Advantages vs Typical Alternatives

Compared to common alternatives, this device stands out due to its exceptionally low on-resistance and high current capability. These related function words translate into reduced heat generation, improved energy savings, and higher reliability for industrial and automotive power circuits. The advanced packaging further enhances thermal management, making it suitable for applications where space and heat dissipation are critical concerns.

Typical Applications

  • Power management modules in industrial automation systems where efficient switching and low conduction loss are crucial for sustained performance and energy savings.
  • DC-DC converters requiring high current throughput and minimal voltage drop to maximize conversion efficiency.
  • Automotive electronic control units (ECUs) that demand robust, reliable MOSFETs for safe and consistent operation under varying load and temperature conditions.
  • Server and data center power supplies, leveraging the low RDS(on) for compact, high-efficiency designs.

BSC011N03LSIATMA1 Brand Info

The BSC011N03LSIATMA1 is part of a distinguished portfolio of power MOSFETs engineered for precision, efficiency, and reliability. Its advanced semiconductor design reflects a commitment to innovation, addressing the needs of industrial, automotive, and computing sectors. This product exemplifies robust performance, combining low on-resistance, high current capability, and a thermally efficient package, positioning it as a trusted choice in high-demand applications.

FAQ

What are the main benefits of the BSC011N03LSIATMA1’s low RDS(on)?

A very low RDS(on) of 1.1m?? means the MOSFET produces less heat and experiences reduced energy loss during operation. This is vital for power-critical applications, as it improves overall system efficiency and allows for more compact thermal management solutions.

What is the maximum continuous drain current rating?

The device supports a continuous drain current of up to 100A, making it suitable for high-power circuits that require reliable and sustained operation under heavy loads. This feature is particularly valuable in industrial, automotive, and server power supply applications.

Which package does the BSC011N03LSIATMA1 use, and why is it important?

It comes in a SuperSO8 surface-mount package, which offers an optimal balance of compact size and excellent thermal performance. This allows engineers to design high-density PCBs while maintaining reliable operation in environments with significant temperature variations.

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Can the BSC011N03LSIATMA1 be used in automotive systems?

Yes, the robust design and high current capability make it suitable for automotive ECUs and related applications. Its wide operating temperature range ensures consistent performance even under harsh automotive conditions.

What are the typical use cases for this MOSFET?

Common applications include power management modules, DC-DC converters, automotive electronic controls, and power supplies for servers or data centers. Its efficiency and reliability make it a versatile component for managing high currents with minimal loss.

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