BSC009NE2LS5IATMA1 Overview
The BSC009NE2LS5IATMA1 is a highly efficient N-channel MOSFET designed for demanding industrial and power management applications. This advanced device delivers ultra-low RDS(on) performance, enabling reduced conduction losses and improved system efficiency. Built for surface-mount implementation, it is suitable for high-speed switching and compact PCB designs. Engineers and procurement specialists rely on this MOSFET for its robust performance, reliable operation, and compatibility with modern automated assembly processes. For additional sourcing information, visit IC Manufacturer.
BSC009NE2LS5IATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | N-channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) | 120 A |
| RDS(on) (max) | 0.9 m?? |
| Gate Charge (Qg) | 52 nC |
| Package Type | PG-TDSON-8 (SuperSO8) |
| Mounting Style | Surface Mount |
| Polarity | Single N-channel |
BSC009NE2LS5IATMA1 Key Features
- Ultra-low RDS(on) of 0.9 m?? significantly reduces conduction losses, maximizing energy efficiency in high-current switching circuits.
- High continuous drain current rating of 120 A enables reliable handling of heavy loads, which is crucial for power-dense industrial systems.
- Optimized for high-speed switching, the device??s low gate charge ensures fast transitions and minimizes switching losses in frequency-intensive designs.
- Compact PG-TDSON-8 (SuperSO8) package supports dense PCB layouts and automated assembly, streamlining production and reducing board space requirements.
BSC009NE2LS5IATMA1 Advantages vs Typical Alternatives
Compared to standard MOSFETs, this device offers exceptional efficiency due to its ultra-low RDS(on) and high current capability. The advanced packaging supports superior thermal management and space savings, while fast switching characteristics further enhance overall system performance. These advantages make it a preferred choice for applications demanding both reliability and efficiency.
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Typical Applications
- High-efficiency DC-DC converters: The device??s low on-resistance and high current handling make it ideal for synchronous rectification and power stage implementation in modern power supplies, improving conversion efficiency and thermal behavior.
- Motor drive circuits: Its robust current capability supports reliable operation in industrial and automotive motor drivers, where efficient switching is essential for performance and longevity.
- Battery management systems: Used in battery protection and switch circuits, where low conduction losses and high reliability are key to system safety and energy conservation.
- Load switching in server and telecom equipment: The MOSFET??s fast switching and low RDS(on) characteristics are beneficial for managing power delivery in high-density, mission-critical systems.
BSC009NE2LS5IATMA1 Brand Info
This product is part of a renowned family of power MOSFETs known for their advanced silicon technology and manufacturing quality. The focus on ultra-low RDS(on) and robust current handling makes it suitable for applications requiring both efficiency and reliability. Its PG-TDSON-8 (SuperSO8) package reflects a commitment to compactness and automated production compatibility, supporting engineers in designing next-generation power systems with confidence.
FAQ
What makes the BSC009NE2LS5IATMA1 suitable for high-efficiency power conversion?
The device??s ultra-low RDS(on) of 0.9 m?? minimizes conduction losses, while its high continuous drain current rating allows for efficient handling of large currents in power converters. These characteristics enable greater energy efficiency and reliable operation in demanding power management circuits.
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Is the BSC009NE2LS5IATMA1 appropriate for compact PCB designs?
Yes, the PG-TDSON-8 (SuperSO8) surface-mount package is specifically designed for high-density layouts. It allows engineers to save valuable board space and simplifies automated assembly, which is beneficial for compact and scalable designs.
What is the maximum voltage and current rating for this MOSFET?
The device supports a maximum drain-source voltage of 25 V and a continuous drain current of up to 120 A. These ratings make it suitable for a wide range of low-voltage, high-current switching applications in industrial electronics.
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Can this device be used for high-speed switching applications?
Absolutely. Its low gate charge and optimized silicon structure enable fast switching, which reduces switching losses and supports higher operating frequencies. This is valuable in applications like synchronous rectifiers and motor drives.
What benefits does the device offer for thermal management?
The advanced packaging and ultra-low on-resistance result in lower heat generation during operation. This enhances thermal performance, ensuring reliable function in power-dense systems and reducing the need for extensive cooling infrastructure.
