BSC009NE2LS5ATMA1 N-Channel MOSFET, 40V 100A, OptiMOS2, SuperSO8 Package

BSC009NE2LS5ATMA1 Overview

The BSC009NE2LS5ATMA1 is a high-performance N-channel MOSFET designed for demanding power management and switching applications. This device leverages advanced semiconductor technology to deliver extremely low on-resistance, efficient switching, and robust thermal characteristics, making it suitable for high-current, low-voltage environments. Its optimized packaging and fast switching capabilities contribute to reduced losses and improved energy efficiency for industrial, automotive, and consumer power designs. For more details and sourcing, visit IC Manufacturer.

BSC009NE2LS5ATMA1 Technical Specifications

Parameter	Value
Transistor Type	N-Channel MOSFET
Drain-Source Voltage (VDS)	25V
On-Resistance (RDS(on))	0.9 m??
Continuous Drain Current (ID)	100A
Gate Charge (Qg)	56 nC
Package Type	SuperSO8
Technology	OptiMOS? 5
Operating Temperature Range	-55??C to +175??C

BSC009NE2LS5ATMA1 Key Features

• Ultra-low on-resistance (0.9 m??) minimizes conduction losses, enabling highly efficient power conversion in compact designs.
• High continuous drain current rating of 100A supports demanding load requirements, ensuring device stability under heavy usage.
• SuperSO8 package provides excellent thermal performance and board space savings, which is critical for dense power architectures.
• Advanced OptiMOS? 5 technology ensures fast switching with low gate charge, reducing switching losses and enhancing overall efficiency.

BSC009NE2LS5ATMA1 Advantages vs Typical Alternatives

Compared to typical N-channel MOSFET alternatives, this device offers significantly lower on-resistance and higher current handling, which means lower conduction losses and improved efficiency. The use of OptiMOS? 5 technology and SuperSO8 packaging delivers enhanced thermal management and fast switching, making it ideal for high-density, high-efficiency power applications where reliability and compactness are essential.

Typical Applications

• High-efficiency DC-DC converters in telecom and server power supplies, where reduced power loss and compact design are critical for energy savings and system reliability.
• Motor drive circuits in industrial automation or automotive systems, benefiting from robust current handling and efficient switching performance.
• Battery protection and management modules, utilizing the device??s low R_DS(on) to minimize heat generation and maximize battery life.
• Synchronous rectification in switched-mode power supplies, leveraging fast switching and thermal robustness for improved overall system efficiency.

BSC009NE2LS5ATMA1 Brand Info

This N-channel MOSFET is part of the OptiMOS? 5 family, renowned for its ultra-low on-state resistance and superior efficiency. It is engineered by a leading semiconductor manufacturer focused on delivering innovative solutions for power management. The device combines advanced silicon technology and an optimized SuperSO8 package to address the stringent requirements of modern power designs in industrial, automotive, and consumer applications.

FAQ

What are the primary benefits of using this MOSFET in high-current applications?

The device??s extremely low on-resistance and high current capability allow for minimal power loss and efficient heat dissipation. This ensures stable operation and high reliability even under demanding load conditions in industrial or automotive systems.

How does the SuperSO8 package contribute to performance?

The SuperSO8 package provides a compact footprint while offering excellent thermal performance. This enables efficient heat management and allows for higher power density in space-constrained designs, which is crucial for advanced power supply and motor control systems.

Is this component suitable for fast switching applications?

Yes, the device??s low gate charge and OptiMOS? 5 technology enable rapid switching with reduced switching losses. This makes it particularly suitable for high-frequency DC-DC converters and synchronous rectification in switched-mode power supplies.

Can this MOSFET be used in automotive environments?

With its wide operating temperature range and robust design, this MOSFET is well-suited for automotive applications, such as electric powertrains, battery management, and motor drivers, where reliability and efficiency are paramount.

What precautions should be taken during PCB layout for optimal performance?

To maximize efficiency and thermal management, ensure proper copper area for heat dissipation and minimize trace inductance in the gate and drain circuits. Following these layout guidelines helps achieve the best possible performance from the device in high-current applications.