BSC007N04LS6ATMA1 Overview
The BSC007N04LS6ATMA1 is a robust N-channel MOSFET designed for high-efficiency power switching and low-loss operation in demanding industrial and automotive environments. With its low RDS(on) and high current capability, this device supports efficient energy transfer and reliable performance. The compact SuperSO8 package enables high-density board layouts while maintaining excellent thermal properties. Its advanced silicon technology ensures both enhanced switching speed and minimized conduction losses, making it a preferred choice for modern power management and motor drive applications. IC Manufacturer
BSC007N04LS6ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Package | SuperSO8 |
| Drain-Source Voltage (VDS) | 40 V |
| Drain Current (ID) | 120 A |
| RDS(on) (max, @VGS=10V) | 0.75 m?? |
| Gate Charge (Qg) | 61 nC |
| Operating Temperature Range | -55??C to 150??C |
| Mounting Type | Surface Mount (SMD) |
BSC007N04LS6ATMA1 Key Features
- Ultra-low RDS(on) of 0.75 m?? enables minimal conduction losses, maximizing energy efficiency in high-current circuits.
- High current handling (up to 120 A) supports demanding loads, ensuring reliable operation in automotive and industrial power stages.
- Designed with a compact SuperSO8 package, allowing for high power density and efficient thermal management in space-constrained designs.
- Fast switching capability with a typical gate charge of 61 nC, facilitating high-speed operation and reducing switching losses.
BSC007N04LS6ATMA1 Advantages vs Typical Alternatives
Compared to standard MOSFETs, this device offers a substantially lower RDS(on), resulting in reduced power dissipation and improved overall efficiency. Its ability to handle high continuous drain current and operate across a wide temperature range provides greater flexibility and reliability. The advanced SuperSO8 package further distinguishes it by enabling higher integration and streamlined PCB layouts for demanding industrial and automotive systems.
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Typical Applications
- Automotive powertrain and body electronics: This MOSFET is ideal for use in electric vehicle inverters, battery management systems, and other automotive power distribution circuits, where high efficiency and strong thermal performance are critical.
- DC-DC converters: Its low RDS(on) and high current capability make it suitable for use in synchronous rectification and power conversion stages in industrial and telecom systems.
- Motor control: The high current rating and fast switching characteristics support precise control and energy savings in motor drive circuits for industrial automation or robotics.
- Load switching and protection: It serves well in high-side or low-side switching roles, enabling robust and reliable load management for power supply units and distributed power architectures.
BSC007N04LS6ATMA1 Brand Info
The BSC007N04LS6ATMA1 is part of a renowned family of power MOSFETs designed for efficiency and reliability in high-performance environments. Engineered to meet stringent quality and performance standards, this product addresses the evolving needs of industrial and automotive applications. Its SuperSO8 package and advanced silicon process represent the brand??s commitment to innovation, ensuring both compactness and superior power handling for next-generation designs.
FAQ
What makes this MOSFET suitable for high-current applications?
Thanks to its low RDS(on) of just 0.75 m?? and a maximum drain current rating of 120 A, this device is engineered to handle substantial current flow with minimal energy loss. This enables efficient operation even under heavy load conditions, critical for automotive and industrial power systems.
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How does the SuperSO8 package benefit circuit designers?
The SuperSO8 package offers a compact footprint while supporting high current and excellent thermal performance. This allows engineers to design more densely populated PCBs, save board space, and achieve better thermal dissipation, which is essential in high-power or space-constrained applications.
Is this device suitable for use in automotive environments?
Yes, its robust construction, high current capability, and wide operating temperature range make it highly suitable for automotive electronics, including powertrain, battery management, and body control systems where durability and reliability are paramount.
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What switching characteristics can be expected from this MOSFET?
With a typical gate charge of 61 nC, this device supports fast switching speeds, which helps reduce switching losses in high-frequency circuits. This makes it ideal for modern DC-DC converters and motor controllers that demand rapid and efficient switching performance.
In what ways does this MOSFET improve system efficiency?
By minimizing conduction and switching losses through a low RDS(on) and optimized gate charge, this MOSFET enhances overall power conversion efficiency. This is particularly beneficial in systems where heat generation and energy savings are critical design considerations.
