BSC004NE2LS5ATMA1 Overview
The BSC004NE2LS5ATMA1 is a high-performance N-channel MOSFET optimized for demanding industrial and power management applications. Featuring an extremely low on-state resistance and robust electrical characteristics, this MOSFET is engineered to deliver efficient power conversion and reliable switching at high frequencies. Its compact SuperSO8 package enables space-saving designs without compromising thermal performance or current handling. The device is well-suited for applications that require high efficiency, low losses, and superior switching behavior. For more detailed information or sourcing, visit IC Manufacturer.
BSC004NE2LS5ATMA1 Technical Specifications
| Parameter | Value |
|---|---|
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 25 V |
| Continuous Drain Current (ID) | 100 A |
| RDS(on) (Max) | 0.4 m?? |
| Gate Charge (Qg) | 13 nC |
| Package | SuperSO8 (5×6 mm) |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55??C to 150??C |
| Polarity | N-Channel |
BSC004NE2LS5ATMA1 Key Features
- Ultra-low RDS(on): The device offers a maximum on-state resistance of just 0.4 m??, minimizing conduction losses and maximizing efficiency in high-current circuits.
- High Current Capability: Supports continuous drain currents up to 100 A, making it suitable for power-intensive applications where reliability is essential.
- Low Gate Charge: With a typical gate charge of 13 nC, the device enables fast switching and reduces gate drive losses, supporting high-frequency operation and compact designs.
- Thermal Efficiency: The SuperSO8 package ensures excellent thermal management, allowing for stable operation under heavy loads and minimizing the need for additional cooling.
- Surface Mount Design: Streamlined for automated assembly processes and high-density PCB layouts, improving manufacturing efficiency and board-level reliability.
BSC004NE2LS5ATMA1 Advantages vs Typical Alternatives
This MOSFET stands out from typical alternatives by combining extremely low on-resistance, high current capability, and fast switching performance in a compact SuperSO8 package. These attributes enable designers to achieve higher efficiency, reduced power dissipation, and reliable operation even in space-constrained or thermally challenging environments. Such advantages make it a preferred choice for modern power management and industrial switching solutions.
🔥 Best-Selling Products
-

Texas Instruments BQ24075 Linear Battery Charger IC – 5mm x 4mm QFN Package
-

Texas Instruments INA219 Current Sensor Module – SOIC Package, Precision Monitoring
-

Texas Instruments LM4041 Precision Voltage Reference – SOT-23 Package
-

Texas Instruments OPA2134 Audio Op Amp – Dual, High-Performance, SOIC-8 Package
Typical Applications
- Switching Power Supplies: The device??s low RDS(on) and high current rating make it ideal for high-efficiency DC-DC converters, synchronous rectification, and other power supply designs where thermal performance and low losses are critical.
- Motor Drives: Used in industrial and automotive motor control circuits, supporting rapid switching and high current handling for robust, precise operation.
- Battery Management Systems: Ensures efficient energy transfer and reliable protection circuits in lithium-ion battery packs and related applications.
- Load Switches: Suitable for high-side and low-side switching in industrial automation, server, and telecom equipment where compact, efficient power switching is required.
BSC004NE2LS5ATMA1 Brand Info
This product is part of a series of advanced power MOSFETs designed for demanding industrial and commercial applications. The manufacturer focuses on delivering devices with best-in-class on-resistance, high current capability, and superior switching speed. The SuperSO8 package used in this MOSFET reflects the brand??s commitment to innovation in thermal management and high-density PCB integration. With a reputation for quality and reliability, the brand ensures that engineers and sourcing professionals receive components that meet rigorous industry standards for performance and durability.
FAQ
What makes this MOSFET suitable for high-efficiency power conversion applications?
The combination of ultra-low on-resistance, high current handling, and low gate charge makes this MOSFET an excellent choice for high-efficiency power conversion. These features reduce conduction and switching losses, enabling designers to meet stringent efficiency targets in modern power electronics.
🌟 Featured Products
-

“Buy MAX9312ECJ+ Precision Voltage Comparator in DIP Package for Reliable Performance”
-

QCC-711-1-MQFN48C-TR-03-1 Bluetooth Audio SoC with MQFN48C Package
-

0339-671-TLM-E Model – High-Performance TLM-E Package for Enhanced Functionality
-

1-1415898-4 Connector Housing, Electrical Wire-to-Board, Receptacle, Packaged
What packaging benefits does the SuperSO8 form factor provide?
The SuperSO8 (5×6 mm) package offers a compact footprint while maintaining excellent thermal performance and current capability. This allows for higher component density on PCBs and supports automated assembly processes, making it well-suited for advanced industrial designs.
Can this device be used in high-frequency switching applications?
Yes, the low gate charge and fast switching characteristics enable efficient operation at higher frequencies. This is important for applications such as DC-DC converters and synchronous rectifiers where rapid switching improves performance and minimizes losses.
📩 Contact Us
What is the maximum continuous drain current supported?
This MOSFET supports a maximum continuous drain current of 100 A, making it appropriate for use in power-hungry systems requiring robust current handling, such as motor drives and battery management circuits.
How does the low RDS(on) benefit thermal management in compact designs?
The minimal on-resistance significantly reduces the heat generated during operation, which in turn eases thermal management challenges. This allows for reliable operation even in compact enclosures or environments with limited cooling resources.





