BCR521E6327HTSA1 ON Semiconductor NPN Transistor, 800mA, SOT-23 Package

  • Provides efficient signal processing, enabling accurate data handling in embedded systems.
  • High-speed operation reduces latency, improving overall system responsiveness.
  • Compact package minimizes board space, allowing for flexible integration in tight layouts.
  • Ideal for industrial automation where stable performance under varying conditions is critical.
  • Manufactured to meet strict quality standards, ensuring long-term operational reliability.
SKU: BCR521E6327HTSA1 Category:
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BCR521E6327HTSA1 Overview

The BCR521E6327HTSA1 is a high-performance, low-noise silicon NPN transistor designed specifically for analog and switching applications in industrial electronics. Featuring a compact SOT-23 package, it ensures efficient board space utilization and optimized thermal performance. This transistor operates reliably across a wide voltage range, making it suitable for signal amplification and switching tasks in precision circuits. Its consistent gain and low collector-emitter saturation voltage contribute to improved energy efficiency and signal integrity. Engineers and sourcing specialists will appreciate its robust design and ease of integration into existing semiconductor assemblies. For more details, visit IC Manufacturer.

BCR521E6327HTSA1 Technical Specifications

Parameter Specification
Transistor Type NPN Silicon Bipolar Junction Transistor
Package SOT-23 Surface Mount
Collector-Emitter Voltage (VCEO) 50 V
Collector Current (IC) 100 mA continuous
Gain Bandwidth Product (fT) 100 MHz minimum
DC Current Gain (hFE) 100 to 300 (at IC=2 mA, VCE=5 V)
Collector-Emitter Saturation Voltage (VCE(sat)) 0.25 V typical (IC=10 mA, IB=1 mA)
Operating Temperature Range -55??C to +150??C
Power Dissipation (Ptot) 350 mW (at 25??C)

BCR521E6327HTSA1 Key Features

  • High Current Gain: Provides stable amplification with hFE values from 100 to 300 ensuring consistent performance in analog circuits.
  • Low Saturation Voltage: Reduces power losses during switching, improving overall circuit efficiency and thermal management.
  • Compact SOT-23 Package: Enables high-density PCB layouts, facilitating integration into space-constrained industrial electronics.
  • Wide Operating Temperature Range: Supports reliable operation in demanding environments from -55??C to 150??C, ideal for industrial applications.

Typical Applications

  • Signal amplification in sensor interface circuits, providing precise and low-noise signal conditioning in industrial measurement systems.
  • Switching elements in power management modules, enabling efficient control of loads and power conversion stages.
  • Driver stage components for relays and small motors, ensuring rapid response and low power dissipation during switching.
  • General-purpose amplification and switching in consumer and industrial electronic devices requiring dependable transistor performance.

BCR521E6327HTSA1 Advantages vs Typical Alternatives

This transistor offers superior gain and low saturation voltage, which translates to enhanced efficiency and reduced thermal stress compared to typical alternatives. Its compact SOT-23 package allows for better PCB real estate management without compromising power handling. Additionally, the wide operating temperature range ensures dependable performance in harsh industrial environments. These characteristics make it a preferred choice for engineers seeking reliable and cost-effective transistor solutions in analog and switching applications.

BCR521E6327HTSA1 Brand Info

The BCR521E6327HTSA1 is manufactured by NXP Semiconductors, a global leader in analog and mixed-signal semiconductor solutions. NXP??s expertise in transistors ensures high-quality, reliable components suited for demanding industrial applications. This product benefits from NXP??s rigorous quality standards, extensive testing, and worldwide support network, making it a trusted component in mission-critical designs. NXP’s commitment to innovation and sustainability further positions this transistor as an optimal choice for modern electronics development.

FAQ

What are the main electrical characteristics of this transistor?

This transistor features a collector

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