BCR198E6327HTSA1 Overview
The BCR198E6327HTSA1 is a high-performance silicon NPN transistor designed for general-purpose amplification and switching applications in industrial electronics. Its compact SOT-23 package supports efficient PCB space utilization, while the device??s electrical characteristics ensure reliable operation in medium-voltage circuits. With a maximum collector current rating suitable for signal processing and low-noise amplification, it is ideal for engineers and sourcing specialists seeking a robust semiconductor solution. This transistor is optimized for efficient power management and thermal stability, making it a dependable choice for diverse electronic assemblies. For more detailed specifications and product support, visit IC Manufacturer.
BCR198E6327HTSA1 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Device Type | NPN Bipolar Junction Transistor | – |
| Collector-Emitter Voltage (VCEO) | 50 | V |
| Collector Current (IC) | 100 | mA |
| Gain Bandwidth Product (fT) | 100 | MHz |
| DC Current Gain (hFE) | 100 – 300 | – |
| Power Dissipation (Ptot) | 350 | mW |
| Package | SOT-23 | – |
| Operating Temperature Range | -55 to +150 | ??C |
| Transition Frequency | 100 | MHz |
BCR198E6327HTSA1 Key Features
- High current gain: Provides stable amplification with a DC current gain ranging from 100 to 300, enabling efficient signal processing in low-noise applications.
- Medium voltage rating: Supports up to 50 V collector-emitter voltage, suitable for switching and amplifier circuits in industrial environments.
- Compact SOT-23 package: Allows for efficient PCB layout and space savings, critical in dense electronic designs and portable devices.
- Wide operating temperature range: Ensures reliable performance from -55??C to +150??C, making it ideal for harsh environmental conditions.
- High transition frequency (fT): At 100 MHz, it supports high-speed switching and amplification in communication and control circuits.
Typical Applications
- Signal amplification in audio and sensor interface circuits, where low noise and stable gain are essential for precision electronics.
- Switching elements in low-power industrial control systems, providing reliable operation at moderate voltages and currents.
- Driver stages in relay and optocoupler circuits, benefiting from the efficient gain and compact form factor.
- General-purpose amplification tasks in consumer electronics such as portable devices and instrumentation requiring robust transistor performance.
BCR198E6327HTSA1 Advantages vs Typical Alternatives
This transistor offers a balanced combination of moderate voltage handling and high current gain, outperforming many generic alternatives in sensitivity and frequency response. Its compact SOT-23 package allows for streamlined integration, while the broad temperature range ensures reliability in industrial settings. Compared to typical BJTs, it delivers efficient switching and amplification with reduced power loss, making it a practical choice for engineers prioritizing dependable performance and footprint optimization.
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BCR198E6327HTSA1 Brand Info
The BCR198E6327HTSA1 is manufactured by Nexperia, a global leader in discrete, logic, and MOSFET components. Nexperia products are known for their high quality, reliability, and innovation in semiconductor technology. This transistor series reflects Nexperia??s commitment to providing robust and efficient devices tailored for industrial and automotive applications. The company’s stringent production standards and extensive testing ensure
