BCR191WE6327HTSA1 Overview
The BCR191WE6327HTSA1 is a high-performance semiconductor device designed for precise switching and amplification applications in industrial electronics. Featuring a compact SMD package, it delivers reliable electrical characteristics suitable for demanding environments. With optimized current gain and low saturation voltage, this component ensures efficient power management and signal control. Its robust thermal properties and stable operation under varied conditions make it ideal for automation, control circuits, and industrial sensing solutions. Available through IC Manufacturer, this transistor offers engineers and sourcing specialists a dependable solution tailored to modern industrial requirements.
BCR191WE6327HTSA1 Technical Specifications
| Parameter | Value |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 500 mA |
| Power Dissipation (Ptot) | 625 mW |
| Transition Frequency (fT) | 100 MHz |
| Gain Bandwidth Product | 100 MHz |
| DC Current Gain (hFE) | 100 – 300 |
| Package | SOT-23 Surface Mount |
| Operating Temperature Range | -55 ??C to +150 ??C |
| Saturation Voltage (VCE(sat)) | 0.2 V (typical) |
BCR191WE6327HTSA1 Key Features
- High Current Gain: Provides efficient amplification, reducing the drive current requirements and enhancing overall circuit performance.
- Low Saturation Voltage: Minimizes power consumption and heat generation, critical for energy-efficient industrial designs.
- Compact SOT-23 Package: Enables space-saving PCB layouts while supporting automated assembly processes.
- Wide Operating Temperature Range: Ensures reliable operation in harsh industrial environments from -55 ??C to +150 ??C.
- High Transition Frequency (100 MHz): Supports high-speed switching applications, improving response times in control systems.
Typical Applications
- Industrial automation control circuits requiring dependable switching transistors for driving relays and indicators with minimal power loss.
- Signal amplification in sensor interfaces where low noise and precise gain are necessary for accurate measurements.
- Switching regulators and power management modules in embedded industrial systems demanding efficient energy use.
- General purpose amplification and switching in consumer and industrial electronic devices where compact size and reliable operation are mandatory.
BCR191WE6327HTSA1 Advantages vs Typical Alternatives
This transistor stands out with its combination of high current gain and low saturation voltage, offering superior efficiency compared to typical BJTs. Its compact SOT-23 package supports modern PCB design trends while maintaining excellent thermal stability. The wide operating temperature range and high transition frequency ensure reliable performance in industrial environments. Overall, it provides enhanced power efficiency, integration ease, and durability, making it a preferred choice over standard discrete transistor alternatives.
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BCR191WE6327HTSA1 Brand Info
The BCR191WE6327HTSA1 is produced by ON Semiconductor, a global leader in semiconductor solutions known for quality, innovation, and comprehensive product portfolios. ON Semiconductor specializes in power and signal management, delivering components optimized for industrial, automotive, and consumer electronics markets. This specific transistor aligns with their commitment to provide reliable, efficient devices that meet stringent industrial requirements. ON Semiconductor??s extensive technical support and global distribution network ensure availability and application assistance for this product.
FAQ
What is the maximum collector current rating of this transistor?
The transistor can handle a maximum collector current of 500 mA, making it suitable for medium power switching and amplification tasks within its electrical limits.
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Which package type is used for BCR191WE6327HTSA1 and why is it important?
It uses a compact SOT-23 surface-mount package, which is important for saving PCB space and enabling automated assembly processes in high-volume manufacturing environments.





