BCR191E6327HTSA1 Panasonic BCR Series Battery Cell 3.7V 2750mAh Cylindrical Pack

  • Performs precise current sensing to enable accurate monitoring and control in electrical systems.
  • Features a high sensitivity specification for detecting small current changes, improving system responsiveness.
  • Encased in a compact CBZ package, it offers efficient board-space usage for dense circuit designs.
  • Ideal for battery management applications, providing reliable current measurement for enhanced safety and performance.
  • Designed with robust manufacturing standards to ensure consistent operation under various environmental conditions.
SKU: BCR191E6327HTSA1 Category:
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BCR191E6327HTSA1 Overview

The BCR191E6327HTSA1 is a precision NPN bipolar junction transistor designed for high-frequency switching and amplification applications. It features a maximum collector current of 0.8 A and a low collector-emitter saturation voltage, ensuring efficient operation in compact circuits. With a transition frequency (fT) of 100 MHz, it supports fast switching speeds suitable for RF and analog signal processing. Packaged in a compact SOT-23 form factor, it facilitates easy PCB integration while maintaining thermal efficiency. This device is ideal for engineers seeking reliable, high-performance transistors for industrial and communication electronics. For further technical details, visit IC Manufacturer.

BCR191E6327HTSA1 Technical Specifications

Parameter Value Unit
Transistor Type NPN
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 0.8 A
Transition Frequency (fT) 100 MHz
DC Current Gain (hFE) 100 to 300
Collector-Emitter Saturation Voltage (VCE(sat)) 0.3 V
Base-Emitter Voltage (VBE) 1.2 V
Power Dissipation (Ptot) 350 mW
Package SOT-23
Operating Temperature Range -55 to +150 ??C

BCR191E6327HTSA1 Key Features

  • High Transition Frequency: Supports switching speeds up to 100 MHz, enabling efficient amplification in RF and high-speed signal circuits.
  • Low Saturation Voltage: Minimizes power loss during switching, enhancing overall circuit efficiency and reducing heat generation.
  • Compact SOT-23 Package: Facilitates space-saving PCB layouts while maintaining robust thermal performance for reliable operation.
  • Wide Operating Temperature Range: Ensures stable performance across industrial temperature variations from -55??C to +150??C.

Typical Applications

  • High-frequency switching stages in communication equipment requiring fast response and low distortion.
  • Analog signal amplification circuits in industrial control systems demanding accuracy and linearity.
  • Driver stages for relay or low-power motor control due to reliable current handling and saturation characteristics.
  • General-purpose amplification in portable battery-powered devices where power efficiency is critical.

BCR191E6327HTSA1 Advantages vs Typical Alternatives

This transistor offers a balanced combination of high gain, fast switching frequency, and low saturation voltage, which typically surpasses standard general-purpose transistors. Its small SOT-23 package enhances integration in miniaturized designs without compromising thermal handling. The extended temperature range and robust current capabilities make it more reliable for industrial applications where environmental conditions and performance consistency are critical.

BCR191E6327HTSA1 Brand Info

The BCR191E6327HTSA1 is a product from ON Semiconductor, a global leader in energy-efficient and innovative semiconductor solutions. Known for high-quality discrete components, ON Semiconductor provides reliable transistors widely used in industrial, automotive, and communication markets. This transistor aligns with the company??s commitment to delivering performance-driven devices that support advanced electronic designs and sustainable applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this device is 0.8 A, allowing it to handle moderate power loads in switching and amplification circuits safely.

Can this transistor be used in RF applications?

Yes, with a transition frequency of 100 MHz, this transistor is suitable for many RF amplifier and switching applications, supporting high-speed signal processing.

What package does this transistor come in and why is it beneficial?

It is available in a SOT-23 package, which is compact and space-saving, ideal for modern PCB designs where board space is limited without sacrificing thermal

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