BCR185WE6327 Panasonic Battery Charger Module – Compact PCB Mount Package

  • This device performs precise signal conditioning to enhance measurement accuracy in electronic circuits.
  • Featuring a wide operating voltage range, it ensures consistent performance across varying power conditions.
  • Its compact CBZ package allows for efficient board space utilization and simplifies system integration.
  • Ideal for industrial sensor interfaces, it supports reliable data acquisition in harsh environments.
  • Manufactured with strict quality controls, it delivers stable operation and long-term reliability in critical applications.
SKU: BCR185WE6327 Category:
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BCR185WE6327 Overview

The BCR185WE6327 is a high-performance bipolar transistor designed for low noise and high-frequency amplification applications. It features a compact SOT-23 package, making it suitable for space-constrained industrial and consumer electronics. This transistor offers a balanced combination of gain, low collector-emitter saturation voltage, and robust switching capabilities. Engineered with reliable semiconductor processes, it delivers consistent performance across a range of operating conditions. Ideal for signal amplification and switching roles, this device supports efficient circuit design and integration. For detailed product procurement and technical support, visit IC Manufacturer.

BCR185WE6327 Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 45 V
Collector Current (IC) 100 mA
Power Dissipation (Ptot) 300 mW
Gain Bandwidth Product (fT) 100 MHz
DC Current Gain (hFE) 100?C300 typical
Collector-Emitter Saturation Voltage (VCE(sat)) 0.25 V
Package Type SOT-23

BCR185WE6327 Key Features

  • High gain bandwidth product: Enables efficient amplification at frequencies up to 100 MHz, making it suitable for RF and high-frequency signal processing.
  • Low collector-emitter saturation voltage: Reduces power loss during switching, enhancing overall energy efficiency in circuit designs.
  • Compact SOT-23 package: Facilitates integration into densely packed PCB layouts, supporting modern miniaturized electronics.
  • Wide operating voltage and current range: Offers flexibility across various applications requiring reliable switching and amplification.

Typical Applications

  • Low noise pre-amplifiers in communication devices, where signal integrity is critical for accurate data transmission.
  • Switching circuits in industrial control systems, providing dependable performance under varying load conditions.
  • Audio signal amplification in consumer electronics, enhancing sound clarity and reducing distortion.
  • Driver stages for relay and LED control, ensuring efficient switching with minimal power consumption.

BCR185WE6327 Advantages vs Typical Alternatives

This transistor offers superior high-frequency performance and low saturation voltage compared to many standard bipolar transistors. Its compact SOT-23 package enables easier PCB integration and space savings. The robust current handling and consistent gain across temperature ranges provide enhanced reliability. These factors combined make it a preferred choice for engineers seeking efficient amplification and switching devices with reliable long-term operation.

BCR185WE6327 Brand Info

The BCR185WE6327 is manufactured by ON Semiconductor, a leading supplier of high-quality discrete and integrated semiconductor devices. ON Semiconductor is recognized for its innovation in power management, signal amplification, and switching components. This product aligns with their commitment to reliable and energy-efficient semiconductor solutions designed to meet the stringent demands of industrial and consumer electronics markets worldwide.

FAQ

What is the maximum collector current supported by this transistor?

The device supports a maximum collector current of 100 mA, making it suitable for low-power amplification and switching tasks often found in signal processing applications.

Can this transistor operate efficiently at high frequencies?

Yes, with a gain bandwidth product of 100 MHz, it is optimized for high-frequency applications including RF amplification and signal conditioning in communication circuits.

What package type does this transistor come in?

It is housed in a SOT-23

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