BCR185E6433HTMA1 Overview
The BCR185E6433HTMA1 is a high-performance bipolar transistor designed for efficient switching and amplification tasks in industrial and consumer electronics. With its robust current handling and low saturation voltage, it supports reliable operation in demanding environments. Optimized for medium power applications, this transistor offers a compact SOT-89 package that facilitates easy integration on printed circuit boards, reducing assembly complexity and enhancing thermal management. Engineers and sourcing specialists appreciate its stable electrical characteristics and consistent gain, making it a dependable choice for signal amplification and switching circuits. For more detailed information, visit IC Manufacturer.
BCR185E6433HTMA1 Technical Specifications
| Parameter | Specification |
|---|---|
| Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (V_CEO) | 45 V |
| Collector Current (I_C) | 0.5 A (max) |
| Gain (h_FE) | 100 to 320 (depending on operating point) |
| Power Dissipation (P_TOT) | 0.8 W |
| Transition Frequency (f_T) | 250 MHz (typical) |
| Saturation Voltage (V_CE(sat)) | 0.3 V (max at I_C = 0.5 A) |
| Package | SOT-89 |
| Operating Temperature Range | -55 ??C to +150 ??C |
BCR185E6433HTMA1 Key Features
- High current capability: Supports collector currents up to 0.5 A, enabling use in medium power amplification and switching circuits.
- Low saturation voltage: Minimizes power loss and heat generation during switching, improving overall system efficiency.
- Wide frequency response: Transition frequency of up to 250 MHz makes it suitable for high-speed switching and RF applications.
- Robust thermal performance: The SOT-89 package allows for efficient heat dissipation, ensuring reliability under continuous operation.
Typical Applications
- General-purpose switching and amplification in consumer electronics, providing reliable performance in audio and signal processing circuits.
- Driver stages for relay and solenoid actuators requiring moderate current handling and fast switching capabilities.
- Intermediate frequency amplification in communication devices, benefiting from the transistor??s high gain and frequency response.
- Power management circuits in industrial equipment where durability and stable operation under varied temperature conditions are critical.
BCR185E6433HTMA1 Advantages vs Typical Alternatives
This transistor stands out due to its combination of low saturation voltage and high current capacity, which reduces power loss compared to standard BJTs. Its wide frequency response and stable gain enhance circuit efficiency, particularly in switching and amplification roles. The compact SOT-89 package supports improved thermal management and easy PCB integration, making it a superior choice against larger or less thermally optimized alternatives.
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BCR185E6433HTMA1 Brand Info
The BCR185E6433HTMA1 is manufactured by ON Semiconductor, a global leader in power and signal management semiconductor solutions. Known for their commitment to quality and innovation, ON Semiconductor provides components designed for durability and efficiency in industrial, automotive, and consumer electronics. This transistor is part of their extensive portfolio of bipolar transistors, optimized for reliable operation and consistent performance across diverse application environments.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current for this device is 0.5 A. This allows it to handle moderate power loads in switching and amplification applications without compromising reliability.
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In what package is the transistor supplied, and how does it affect its usage?
The transistor comes in a SOT-89 package, which offers a compact footprint and improved thermal dissipation. This package type facilitates easier PCB layout and better heat management compared to traditional small-outline packages.
What is the typical gain (h_FE) range of this transistor?
The current gain (h_FE) typically ranges from 100 to 320 depending on the operating conditions. This wide gain range ensures flexibility for various circuit designs requiring different amplification levels.
