BCR183WE6327HTSA1 Overview
The BCR183WE6327HTSA1 is a high-performance bipolar transistor designed for switching and amplification in industrial electronic applications. Featuring a medium power rating and robust electrical characteristics, it offers reliable operation in demanding environments. This transistor supports efficient signal modulation with stable gain and low saturation voltage, making it suitable for use in power management, signal processing, and general-purpose amplification. Manufactured by IC Manufacturer, it ensures quality consistency and compatibility with automated assembly processes, optimizing production yield and device longevity.
BCR183WE6327HTSA1 Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor (BJT) |
| Collector-Emitter Voltage (VCEO) | 45 V |
| Collector Current (IC) | 600 mA |
| Gain Bandwidth Product (fT) | 100 MHz |
| DC Current Gain (hFE) | 100 ?C 300 (typical) |
| Power Dissipation (Ptot) | 625 mW |
| Package Type | SOT-23 Surface-Mount |
| Operating Temperature Range | -55??C to +150??C |
BCR183WE6327HTSA1 Key Features
- High gain and frequency response: Enables efficient amplification of signals up to 100 MHz, beneficial for RF and high-speed switching circuits.
- Compact SOT-23 package: Facilitates space-saving PCB layouts and supports automated surface-mount assembly for cost-efficient manufacturing.
- Robust voltage and current handling: Supports up to 45 V collector-emitter voltage and 600 mA collector current, ensuring reliable operation under moderate power conditions.
- Wide temperature tolerance: Operates reliably across -55??C to +150??C, suitable for harsh industrial environments requiring thermal stability.
Typical Applications
- Switching and amplification in industrial control circuits, where reliable medium-power transistor performance is essential for signal integrity and system stability.
- Portable instrumentation requiring low-power amplification with high gain and minimal footprint on the PCB.
- General-purpose amplification tasks in communication devices that operate within moderate voltage and current limits.
- Signal conditioning and driver stages in sensor interface modules, leveraging its frequency response and robustness.
BCR183WE6327HTSA1 Advantages vs Typical Alternatives
This transistor offers a balanced combination of voltage tolerance, current capacity, and gain, making it advantageous over many standard small-signal transistors. Its compact SOT-23 package allows for high-density PCB designs, while the broad operating temperature range ensures dependable performance in industrial applications. Compared to alternatives, it delivers consistent gain at high frequency with lower saturation voltage, improving overall circuit efficiency and reducing power losses.
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BCR183WE6327HTSA1 Brand Info
The BCR183WE6327HTSA1 is produced by a leading semiconductor manufacturer known for delivering high-quality discrete components optimized for industrial and consumer electronics. This brand is recognized for its rigorous quality control, comprehensive datasheets, and strong support infrastructure, enabling engineers to design reliable and efficient systems. The product line focuses on small-signal transistors that balance performance with manufacturability, addressing a wide range of switching and amplification requirements in modern electronics.
FAQ
What type of transistor is the BCR183WE6327HTSA1?
The device is an NPN bipolar junction transistor (BJT), designed primarily for switching and amplification applications. It operates effectively within moderate voltage and current ranges common in industrial and consumer electronics.
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What are the key electrical limits for this transistor?
This transistor supports a maximum collector-emitter voltage of 45 V and a collector current up to 600 mA. Its power dissipation rating is 625 mW, ensuring it can handle moderate power applications without thermal issues when properly mounted.





