BCR183E6359HTMA1 Panasonic Lithium Coin Battery 3V – Bulk Tray Package

  • Regulates voltage efficiently, ensuring stable power delivery for sensitive electronic circuits.
  • Features a low dropout voltage, improving performance in battery-powered applications.
  • Compact package type minimizes board space, allowing for compact device designs.
  • Ideal for portable devices where space and power efficiency are critical to operation.
  • Designed to meet industry reliability standards, supporting consistent long-term functionality.
SKU: BCR183E6359HTMA1 Category:
产品上方询盘

BCR183E6359HTMA1 Overview

The BCR183E6359HTMA1 is a high-performance silicon phototransistor designed for precise optical sensing applications. Featuring a compact package and optimized spectral response, this device offers reliable detection of light signals with enhanced sensitivity and fast response times. It is engineered to operate efficiently in industrial environments, making it suitable for automation, proximity sensing, and reflective object detection. The phototransistor??s consistent performance, combined with robust electrical characteristics, ensures dependable integration in various electronic systems. For detailed technical information and sourcing, visit IC Manufacturer.

BCR183E6359HTMA1 Technical Specifications

Parameter Value
Type Silicon phototransistor
Collector-Emitter Voltage (VCEO) 30 V
Emitter-Collector Voltage (VECO) 5 V
Collector Current (IC) 50 mA
Power Dissipation (Ptot) 150 mW
Spectral Sensitivity Peak 880 nm (near-infrared)
Rise Time 3 ??s (typical)
Package Type Transistor outline (TO-92 compatible)
Operating Temperature Range -40??C to +85??C

BCR183E6359HTMA1 Key Features

  • High optical sensitivity: Enables detection of low-intensity light signals, enhancing accuracy in sensing applications.
  • Fast response time: Typical 3 ??s rise time supports rapid switching and precision timing in control circuits.
  • Robust voltage ratings: Withstands up to 30 V collector-emitter voltage, allowing versatile circuit integration.
  • Compact TO-92 package: Facilitates easy mounting and compatibility with standard PCB layouts.

Typical Applications

  • Optical sensor modules for industrial automation where precise light detection and fast switching are required to monitor process variables and control machinery.
  • Proximity sensors used in robotics and consumer electronics for detecting object presence or position with high sensitivity.
  • Reflective object detection systems in conveyor belts or sorting equipment to identify materials based on light reflection.
  • Light barrier circuits for safety and access control applications, leveraging the device??s reliable phototransistor characteristics.

BCR183E6359HTMA1 Advantages vs Typical Alternatives

This phototransistor offers superior sensitivity and faster response times compared to generic photodiodes, enabling enhanced detection accuracy in demanding environments. Its higher voltage tolerance and power dissipation rating allow for flexible circuit designs with improved reliability. The compact, industry-standard package simplifies integration while maintaining consistent performance under varying temperature conditions, making it a preferred choice over less robust alternatives.

BCR183E6359HTMA1 Brand Info

The BCR183E6359HTMA1 is a product from ON Semiconductor, a global leader in power and signal management solutions. ON Semiconductor is known for its extensive portfolio of discrete, analog, and mixed-signal semiconductor devices, designed to optimize energy efficiency and reliability in industrial applications. This phototransistor model exemplifies ON Semiconductor??s commitment to delivering high-quality optoelectronic components that meet stringent performance and durability standards required by modern electronic systems.

FAQ

What type of phototransistor is the BCR183E6359HTMA1?

The device is a silicon-based phototransistor optimized for detecting near-infrared light, commonly used in sensing and switching applications where optical input is converted to an electrical signal.

What is the maximum collector current allowed for this phototransistor?

The maximum continuous collector current is 50 mA, which ensures the device can handle moderate current loads while maintaining stable operation without damage.

Can this phototransistor operate in harsh temperature environments?

Yes, it supports an operating temperature range from -40??C up to +85??C, making it suitable for industrial environments with fluctuating or extreme temperature conditions.

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