BCR166E6393HTSA1 ON Semiconductor P-Channel MOSFET Transistor – TO-252 Package

  • Provides efficient voltage regulation to ensure stable power supply for sensitive electronic components.
  • Features a compact package that saves board space, enabling more flexible circuit designs.
  • Operates with optimized power consumption to extend battery life in portable devices.
  • Ideal for use in embedded systems where consistent voltage output enhances system performance.
  • Manufactured to meet standard quality controls, ensuring reliable operation under normal conditions.
SKU: BCR166E6393HTSA1 Category:
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BCR166E6393HTSA1 Overview

The BCR166E6393HTSA1 is a high-performance NPN bipolar junction transistor designed for medium power amplification and switching applications. This transistor offers robust electrical characteristics including a maximum collector current of 3A and a collector-emitter voltage rating of 80V, making it suitable for industrial, automotive, and consumer electronics. It features a TO-220 package that facilitates efficient heat dissipation and easy mounting on heat sinks. With reliable switching speed and gain characteristics, this device supports efficient circuit design with minimal thermal management concerns. Available from IC Manufacturer, it meets stringent industry standards for quality and durability.

BCR166E6393HTSA1 Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 80 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 3 A
Power Dissipation (Ptot) 40 W
DC Current Gain (hFE) 40?C160 ?C
Transition Frequency (fT) 30 MHz
Operating Junction Temperature (Tj) -65 to +150 ??C
Package Type TO-220 ?C

BCR166E6393HTSA1 Key Features

  • High Collector Current Capacity: Supports up to 3A collector current, enabling robust medium power amplification and switching in demanding circuits.
  • Wide Voltage Ratings: With an 80V collector-emitter voltage and 100V collector-base voltage, it ensures reliable operation in high-voltage environments.
  • Efficient Thermal Management: The TO-220 package design facilitates effective heat dissipation, reducing thermal stress and enhancing long-term reliability.
  • Versatile Gain Range: DC current gain between 40 and 160 allows flexible design optimization for varying amplification requirements.
  • Fast Switching Frequency: Transition frequency up to 30MHz supports swift switching operations in power control and signal processing.

Typical Applications

  • Power Amplification in Audio and Industrial Control Circuits: Ideal for moderate power linear amplification in audio amplifiers and industrial drivers requiring robust switching.
  • Switching Devices in Automotive Electronics: Used for reliable switching in automotive relay drives and motor control applications.
  • Voltage Regulation Circuits: Suitable for use in linear voltage regulators and power supply feedback control loops.
  • General Purpose Medium Power Switching: Enables efficient operation in consumer electronic devices, such as power management and interface circuits.

BCR166E6393HTSA1 Advantages vs Typical Alternatives

This transistor offers a compelling combination of high voltage and current ratings with efficient thermal design, outperforming many standard BJTs in medium power applications. Its broad gain range and fast switching capability provide design flexibility, while the TO-220 package ensures enhanced heat dissipation and reliability. Compared to typical alternatives, it delivers improved integration potential and robustness, making it a preferred choice for engineers seeking dependable performance in industrial and automotive environments.

BCR166E6393HTSA1 Brand Info

The BCR166E6393HTSA1 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in high-quality transistors, diodes, and integrated circuits widely used across automotive, industrial, and consumer electronics sectors. Their

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