BCR148WE6327BTSA1 Overview
The BCR148WE6327BTSA1 is a high-performance bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a complementary NPN configuration and optimized for low noise and high gain, this transistor delivers reliable performance in industrial and consumer electronics. Its compact SOT-23 package ensures ease of integration into surface-mount designs, while maintaining thermal stability and efficient power dissipation. With consistent electrical characteristics and robust construction, this device is ideal for engineers and sourcing specialists seeking dependable semiconductor components from a trusted source like IC Manufacturer.
BCR148WE6327BTSA1 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | NPN Bipolar Junction Transistor | – |
| Collector-Emitter Voltage (VCEO) | 45 | V |
| Collector Current (IC) | 100 | mA |
| Gain Bandwidth Product (fT) | 100 | MHz |
| DC Current Gain (hFE) | 100?C300 | – |
| Power Dissipation (Ptot) | 350 | mW |
| Package Type | SOT-23 | – |
| Operating Temperature Range | -55 to +150 | ??C |
| Transition Frequency | 100 | MHz |
BCR148WE6327BTSA1 Key Features
- High current gain: Enables efficient signal amplification, reducing the need for additional stages in amplifier circuits.
- Low noise performance: Critical for sensitive analog applications, ensuring signal integrity in communication and audio devices.
- Compact SOT-23 package: Facilitates high-density PCB layouts with surface-mount technology, saving space and improving thermal management.
- Wide operating temperature range: Ensures reliable operation in harsh environmental conditions, suitable for industrial-grade electronics.
Typical Applications
- Signal amplification in low-power audio and RF circuits, where high gain and low noise are essential for clear output quality.
- Switching elements in portable and battery-powered devices requiring efficient power management and minimal leakage currents.
- Driver stages in relay and solenoid control circuits, providing reliable switching performance with moderate current handling.
- General-purpose amplification in consumer electronics, industrial automation, and communication equipment.
BCR148WE6327BTSA1 Advantages vs Typical Alternatives
This transistor offers superior gain and noise characteristics compared to standard BJTs, enhancing both amplification quality and efficiency. Its low power dissipation and robust thermal stability provide reliability advantages over comparable devices. The compact SOT-23 package also supports modern surface-mount assembly methods, optimizing footprint and integration. These qualities make it an excellent choice for engineers prioritizing performance, durability, and space-saving design in semiconductor components.
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BCR148WE6327BTSA1 Brand Info
The BCR148WE6327BTSA1 is manufactured by ON Semiconductor, a global leader in energy-efficient semiconductor solutions. ON Semiconductor specializes in discrete, analog, and power management devices designed to improve system performance and reliability. This transistor aligns with ON Semiconductor??s commitment to quality and innovation, providing engineers with dependable components that meet stringent industrial standards. The device is part of their comprehensive portfolio aimed at supporting diverse applications from consumer electronics to industrial automation.
FAQ
What is the maximum collector current rating of this transistor?
The transistor supports a maximum collector current of 100 mA, making it suitable for low to moderate power switching and amplification tasks in various electronic circuits.
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Can this device operate in high-frequency applications?
Yes, with a transition frequency (fT) of 100 MHz, it is well-suited for moderate-frequency signal amplification and switching, including RF and communication applications.
What package type does this device use, and how does it benefit PCB design?
The device comes in a compact SOT-





