BCR142B6327HTLA1 Overview
The BCR142B6327HTLA1 is a high-performance silicon NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a robust maximum collector current and voltage rating, this transistor ensures reliable operation in demanding industrial environments. Its compact SOT-23 package supports efficient thermal management and easy PCB integration. Ideal for signal amplification, switching circuits, and driver stages, this device balances performance with cost-effectiveness. Engineers and sourcing specialists will benefit from its stable electrical characteristics and compatibility with a wide range of industrial applications. For detailed product sourcing and technical support, visit IC Manufacturer.
BCR142B6327HTLA1 Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 45 V |
| Collector Current (IC) | 0.8 A (max) |
| Power Dissipation (Ptot) | 350 mW (at 25??C) |
| Gain Bandwidth Product (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 100 to 300 (at IC=2 mA) |
| Package Type | SOT-23 |
| Operating Temperature Range | -55??C to +150??C |
| Transition Frequency | 100 MHz (typical) |
BCR142B6327HTLA1 Key Features
- High collector current capacity: Supports up to 0.8 A, enabling efficient switching and amplification in medium power applications.
- Wide voltage rating: Collector-emitter voltage of 45 V ensures reliable operation in circuits with moderate voltage requirements.
- Fast switching speed: Gain bandwidth product around 100 MHz facilitates high-frequency signal processing and reduces switching losses.
- Compact SOT-23 package: Minimizes PCB footprint while providing adequate thermal dissipation for stable performance in compact designs.
- Stable DC gain: Typical current gain between 100 and 300 assures predictable amplification across a range of operating conditions.
- Wide operating temperature range: Suitable for industrial environments, maintaining performance from -55??C to +150??C.
- Reliable and consistent performance: Designed for long-term stability in signal amplification and switching applications.
Typical Applications
- Signal amplification in audio and low power RF circuits, where linearity and gain stability are critical for performance.
- Switching applications in industrial control systems, providing fast and efficient transistor switching capabilities.
- Driver stages for relays, LEDs, and other semiconductor devices requiring moderate current handling.
- General-purpose amplification in instrumentation and sensor interfacing where low noise and stable gain are required.
BCR142B6327HTLA1 Advantages vs Typical Alternatives
This transistor offers a compelling balance of current handling and voltage rating in a compact SOT-23 package, making it advantageous over many discrete BJTs that may require larger packages or offer lower frequency response. Its high gain and fast switching capabilities enhance circuit efficiency and reliability, particularly in industrial and control applications. The wide operating temperature range and stable electrical characteristics ensure dependable performance where alternatives may falter under thermal or electrical stress.
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BCR142B6327HTLA1 Brand Info
The BCR142B6327HTLA1 is manufactured by ON Semiconductor, a globally recognized leader in the semiconductor industry. ON Semiconductor specializes in energy-efficient electronics and advanced power management solutions. This transistor is part of their extensive portfolio designed to meet the rigorous demands of industrial and commercial applications. Known for quality, reliability, and technical innovation, ON Semiconductor supports engineers with comprehensive datasheets, application notes, and design tools to optimize device integration.
