BCR141WE6327HTSA1 Overview
The BCR141WE6327HTSA1 is a high-performance phototransistor designed for industrial and consumer electronics applications requiring precise optical sensing. Featuring a compact SMD package and optimized spectral response, it delivers reliable light detection with fast response times. Its robust construction ensures stable operation across a wide temperature range, making it suitable for automated systems, ambient light sensing, and object detection. Engineers and sourcing specialists will appreciate its ease of integration and consistent performance in demanding environments. For detailed component sourcing and support, visit IC Manufacturer.
BCR141WE6327HTSA1 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Phototransistor |
| Package | SMD (Surface-Mount Device) |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Emitter-Collector Voltage (VECO) | 5 V |
| Collector Current (IC) | 5 mA (max) |
| Spectral Peak Sensitivity | 850 nm (near-infrared) |
| Rise Time | 15 ??s (typical) |
| Storage Temperature Range | -40??C to +85??C |
| Operating Temperature Range | -25??C to +85??C |
BCR141WE6327HTSA1 Key Features
- High sensitivity phototransistor enables accurate detection of near-infrared light, ensuring precise optical signal conversion for reliable system monitoring.
- Compact SMD package facilitates easy PCB integration in space-constrained designs without compromising performance or thermal handling.
- Fast response time of approximately 15 microseconds supports applications requiring rapid light detection and switching.
- Wide operating temperature range guarantees stable performance in harsh industrial environments and outdoor applications.
Typical Applications
- Infrared object detection and proximity sensing systems, where reliable detection of reflective or emitted IR signals is critical for automation or safety controls.
- Ambient light sensing for display brightness adjustment in consumer electronics and industrial equipment.
- Optical encoders and position sensors in motor control and robotics, enabling precise movement feedback.
- Data communication systems using infrared signals, supporting reliable optical data transfer with minimal interference.
BCR141WE6327HTSA1 Advantages vs Typical Alternatives
This phototransistor offers superior sensitivity to near-infrared light combined with a compact SMD form factor, enabling easy integration in modern designs. Its fast switching speed and stable operation under wide temperature conditions provide enhanced reliability compared to generic photodiodes or larger discrete phototransistors. The device??s controlled electrical parameters also reduce design complexity by minimizing the need for extensive external circuitry, making it a preferred choice for precision optical sensing tasks.
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BCR141WE6327HTSA1 Brand Info
The BCR141WE6327HTSA1 is manufactured by ON Semiconductor, a global leader in power and signal management semiconductor solutions. ON Semiconductor specializes in delivering energy-efficient components that support automotive, industrial, and consumer applications. This product aligns with ON Semiconductor??s commitment to innovation and quality, offering engineers a dependable phototransistor that meets stringent industry standards for performance and reliability.
FAQ
What is the primary function of the BCR141WE6327HTSA1 phototransistor?
The device converts incident near-infrared light into an electrical signal, enabling optical sensing in various applications such as proximity detection, ambient light measurement, and optical communication. Its phototransistor structure amplifies the photocurrent, providing higher sensitivity than photodiodes.
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What are the key electrical limitations to consider when using this phototransistor?
Designers should note the maximum collector-emitter voltage of 30 V and maximum collector current of 5 mA to prevent device damage. Operating within these limits ensures reliable performance and longevity of the component in the system.
