BCR129E6327HTSA1 Panasonic P-Channel MOSFET Transistor, SMD Package

BCR129E6327HTSA1 Overview

The BCR129E6327HTSA1 is a precision phototransistor designed for high-sensitivity optical detection in industrial and consumer applications. This device offers reliable performance with stable switching characteristics and fast response times, making it suitable for a variety of light-sensing tasks. Its compact SMD package supports automated assembly and space-saving designs. Engineered for durability and consistent operation, this phototransistor is ideal for engineers seeking an efficient solution for optical signal detection. For detailed product and sourcing information, visit the IC Manufacturer.

BCR129E6327HTSA1 Technical Specifications

BCR129E6327HTSA1 Key Features

• High Sensitivity Phototransistor: Enables precise detection of low-intensity infrared light, enhancing signal accuracy in optical sensing applications.
• Fast Switching Speed: Typical rise and fall times of 5 ??s support rapid response in dynamic light environments, critical for real-time monitoring systems.
• Compact SMD Package: Facilitates automated PCB assembly and space-efficient designs, reducing manufacturing costs and footprint.
• Wide Operating Temperature Range: Ensures reliable performance across industrial temperature conditions, supporting robust system integration.

Typical Applications

• Infrared remote control receivers, where precise and fast detection of IR signals is necessary for accurate command interpretation.
• Optical sensor modules in automation systems that require reliable light detection for feedback and control functions.
• Proximity detection and object sensing in consumer electronics and industrial equipment, enhancing safety and interaction.
• Light-based switching and counting devices in industrial measurement systems, contributing to efficient process monitoring.

BCR129E6327HTSA1 Advantages vs Typical Alternatives

This phototransistor offers superior sensitivity and fast switching capabilities compared to many standard photodetectors. Its low dark current minimizes noise, improving signal reliability in low-light applications. The compact SMD format enhances integration flexibility, and the broad temperature tolerance ensures consistent operation in demanding environments. These advantages make it a preferred choice for engineers prioritizing precision, efficiency, and durability in optical sensing components.

BCR129E6327HTSA1 Brand Info

The BCR129E6327HTSA1 is manufactured by ON Semiconductor, a global leader in power and signal management semiconductor solutions. ON Semiconductor is recognized for delivering high-quality, reliable optoelectronic components designed to meet rigorous industrial standards. This phototransistor reflects the brand??s commitment to innovation and performance, making it suitable for a wide range of applications requiring efficient light detection and fast response times.

FAQ

What type of phototransistor is suitable for infrared light detection?

The BCR129E6327HTSA1 is an NPN silicon phototransistor specifically designed for infrared light detection, with a peak sensitivity around 940 nm. This makes it ideal for applications like remote controls and optical sensors that operate in the IR spectrum.

How does the BCR129E6327HTSA1 perform under different temperature conditions?

This device can reliably operate between -25??C and +85??C, ensuring stable functionality in both