BCR119WE6327HTSA1 Overview
The BCR119WE6327HTSA1 is a high-performance silicon NPN bipolar junction transistor designed for medium power switching and amplification applications. Featuring a robust collector current rating and optimized gain characteristics, it excels in industrial control circuits, power management modules, and signal amplification tasks. Its compact SOT-223 package ensures efficient thermal management and easy integration into densely packed assemblies. Engineers and sourcing specialists will appreciate its reliability and consistent performance across a wide temperature range, making it suitable for demanding environments. This transistor is a dependable choice from IC Manufacturer for enhancing circuit efficiency and durability.
BCR119WE6327HTSA1 Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 45 V |
| Collector Current (IC) | 800 mA |
| Gain Bandwidth Product (fT) | 100 MHz (typical) |
| DC Current Gain (hFE) | 100 ?C 300 (depending on collector current) |
| Power Dissipation (Ptot) | 1.0 W (at 25??C) |
| Package | SOT-223 surface mount |
| Operating Temperature Range | -55??C to +150??C |
BCR119WE6327HTSA1 Key Features
- Medium power switching capability: Supports collector current up to 800 mA, enabling efficient control of moderate loads in power management circuits.
- Wide voltage rating: Collector-emitter voltage of 45 V allows operation in a variety of industrial and consumer electronic environments.
- High gain performance: DC current gain ranging from 100 to 300 ensures reliable amplification and signal integrity in analog and switching applications.
- Compact SOT-223 package: Facilitates improved thermal dissipation and eases PCB layout in space-constrained designs.
- Robust thermal stability: Functionality across a wide temperature range (-55??C to +150??C) guarantees dependable operation in harsh industrial conditions.
Typical Applications
- Industrial control circuits requiring reliable medium power switching and amplification with efficient heat dissipation for long-term durability.
- Signal amplification stages in consumer electronics where moderate current gain and frequency response are essential.
- Power management modules in automotive and industrial equipment benefiting from compact package and wide voltage tolerance.
- Interface drivers and relay drivers where switching speed and current handling are critical for system responsiveness.
BCR119WE6327HTSA1 Advantages vs Typical Alternatives
This transistor offers a balanced combination of moderate collector current capability and high DC gain, which provides enhanced amplification accuracy compared to generic low-power transistors. Its 45 V voltage rating and 1.0 W power dissipation support robust operation in demanding environments. The SOT-223 package optimizes heat dissipation better than smaller SOT-23 types, improving reliability and integration in compact industrial boards.
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BCR119WE6327HTSA1 Brand Info
The BCR119WE6327HTSA1 is manufactured by ON Semiconductor, a global leader in energy-efficient semiconductor solutions. Known for delivering high-quality components tailored to industrial, automotive, and consumer applications, ON Semiconductor ensures the transistor meets stringent quality and performance standards. The brand emphasizes innovation and reliability, supporting engineers with comprehensive datasheets and application notes to facilitate seamless integration of this device into complex electronic systems.
FAQ
What is the maximum collector current rating of this transistor?
The device supports a maximum collector current of 800 mA, allowing it to handle medium power loads commonly found in industrial switching and amplification applications effectively.
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Which package type does this transistor come in and why is it important?
It is housed in a SOT-223 surface mount package, which is important for efficient thermal management and ease






