The BCR119E6327HTSA1 is a precision bipolar junction transistor (BJT) optimized for signal amplification and switching applications in industrial electronics. Featuring high current gain and low noise characteristics, this transistor supports efficient linear and switching operation across a broad voltage and current range. Its robust package ensures reliable thermal performance and mechanical stability, making it suitable for demanding environments. Engineers and sourcing specialists will find this device ideal for integrating into analog circuits requiring consistent performance and durability. For detailed technical insights, visit IC Manufacturer.
BCR119E6327HTSA1 Technical Specifications
Parameter
Value
Unit
Collector-Emitter Voltage (VCEO)
30
V
Collector Current (IC)
0.8
A
Power Dissipation (Ptot)
625
mW
Current Gain (hFE)
100 to 300
(typical)
Transition Frequency (fT)
100
MHz
Collector-Base Voltage (VCBO)
40
V
Emitter-Base Voltage (VEBO)
5
V
Package Type
TO-92
?C
Operating Temperature Range
-55 to +150
??C
BCR119E6327HTSA1 Key Features
High current gain: Ensures efficient signal amplification with low input current, improving circuit sensitivity and performance.
Low noise operation: Minimizes signal distortion, critical for audio and high-frequency analog applications.
Wide voltage range: Supports collector-emitter voltages up to 30V, providing flexibility for various circuit designs.
Compact TO-92 package: Facilitates easy integration into space-constrained PCB layouts while maintaining thermal stability.
High transition frequency (100 MHz): Enables effective use in RF and high-speed switching circuits.
Robust temperature tolerance: Operates reliably within -55??C to +150??C, suitable for industrial environments.
Typical Applications
Analog signal amplification in industrial sensors and instrumentation, where precise current control and low noise are essential for accurate measurements.
Switching elements in power management circuits requiring fast response and moderate current handling.
Audio preamplifiers and low-level signal conditioning circuits benefiting from the device??s low noise and high gain.
RF circuits and oscillators leveraging the transistor??s high transition frequency for stable high-frequency operation.
BCR119E6327HTSA1 Advantages vs Typical Alternatives
This transistor stands out with its combination of high current gain and low noise, offering superior signal fidelity compared to generic BJTs. Its wide operating temperature range and robust TO-92 package ensure reliable performance in harsh industrial settings. The balanced electrical characteristics facilitate integration in both analog and switching applications, providing engineers with a versatile solution that enhances efficiency and reliability versus typical alternatives.
The BCR119E6327HTSA1 is produced by ON Semiconductor, a global leader in semiconductor manufacturing known for delivering high-quality discrete components and integrated circuits. ON Semiconductor focuses on energy-efficient and reliable products tailored for industrial, automotive, and consumer electronics markets. This transistor reflects the brand??s commitment to robust, high-performance devices suitable for demanding applications requiring precision and durability.
