BCR116E6327HTSA1 Overview
The BCR116E6327HTSA1 is a high-performance NPN bipolar junction transistor designed for industrial and consumer electronics applications. Featuring a medium power rating and optimized for switching and amplification tasks, this transistor offers reliable operation across a wide range of voltages and currents. Its robust electrical characteristics make it suitable for use in signal amplification, driver stages, and general switching circuits. Manufactured to stringent quality standards, the device ensures stable performance and long-term reliability. For detailed specifications and sourcing, visit IC Manufacturer.
BCR116E6327HTSA1 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (V_CEO) | 45 | V |
| Collector Current (I_C) | 0.8 | A |
| Power Dissipation (P_tot) | 0.625 | W |
| DC Current Gain (h_FE) | 100 – 300 | ?? |
| Transition Frequency (f_T) | 100 | MHz |
| Emitter-Base Voltage (V_EBO) | 5 | V |
| Storage Temperature Range (T_stg) | -55 to 150 | ??C |
| Operating Junction Temperature (T_j) | 150 | ??C |
| Package Type | TO-92 | ?? |
BCR116E6327HTSA1 Key Features
- High DC current gain: Enables efficient amplification with minimal input current, improving circuit sensitivity and reducing power consumption.
- Medium power handling capability: Supports up to 0.625 W power dissipation, making it suitable for moderate load switching and amplification tasks.
- Wide operating temperature range: Ensures reliable performance in harsh and variable environmental conditions common in industrial applications.
- High transition frequency (100 MHz): Allows for effective operation in high-frequency switching and signal processing circuits.
- Compact TO-92 package: Facilitates easy PCB integration and efficient heat dissipation in space-constrained designs.
Typical Applications
- Signal amplification in audio and RF circuits, providing stable gain and low distortion for clean output signals.
- Switching applications in power control circuits, enabling efficient on/off control of loads in industrial systems.
- Driver stage transistors in relay and motor control circuits, supporting moderate current loads with reliable switching speed.
- General purpose low noise amplification in consumer electronics and instrumentation requiring consistent performance.
BCR116E6327HTSA1 Advantages vs Typical Alternatives
This transistor offers a balanced combination of current gain, voltage rating, and power dissipation, providing superior switching performance and amplification accuracy compared to typical general-purpose transistors. Its wide temperature tolerance and high transition frequency enhance reliability and efficiency, making it well-suited for demanding industrial environments. The compact TO-92 package simplifies integration without compromising thermal management, adding to its versatility over bulkier or less thermally capable alternatives.
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BCR116E6327HTSA1 Brand Info
The BCR116E6327HTSA1 is produced by a reputable semiconductor manufacturer known for delivering high-quality bipolar transistors tailored for industrial and consumer applications. The brand emphasizes rigorous quality control, ensuring devices meet international standards for electrical performance and durability. This specific model is part of a family designed for robust switching and amplification tasks, widely adopted in Europe and Asian markets for cost-effective, reliable transistor solutions.
FAQ
What is the maximum collector current rating of this transistor?
The maximum continuous collector current for this transistor is 0.8 A, allowing it to handle moderate current loads in switching and amplification applications without risk of damage under proper operating conditions.
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Can this transistor operate at high frequencies?
Yes, the device features a transition frequency of 100 MHz, making it suitable for high-frequency switching and signal amplification circuits commonly found in RF and communication devices.
What package does the transistor come in, and how does it affect thermal performance?
This transistor is housed in






