BCR108E6433HTMA1 Overview
The BCR108E6433HTMA1 is a precision semiconductor device designed for industrial and electronic system applications requiring robust performance and high reliability. Engineered with advanced technology, it delivers consistent electrical characteristics ideal for power management, signal conditioning, and control circuits. Its compact SMD package supports efficient PCB integration, enabling optimized space utilization. This device ensures stable operation under varying thermal and electrical conditions, making it a reliable choice for engineers and sourcing specialists focused on long-term product stability and performance. For detailed technical support, visit IC Manufacturer.
BCR108E6433HTMA1 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Bipolar Transistor (NPN) |
| Collector-Emitter Voltage (Vceo) | 80 V |
| Collector Current (Ic) | 0.5 A (Max) |
| Power Dissipation (Pd) | 350 mW |
| DC Current Gain (hFE) | 100 to 320 |
| Transition Frequency (fT) | 100 MHz |
| Package Type | SOT-23 |
| Operating Temperature Range | -55??C to +150??C |
| Base-Emitter Voltage (Vbe) | 1.2 V (Typ) |
BCR108E6433HTMA1 Key Features
- High Voltage Handling: Supports up to 80 V collector-emitter voltage, enabling use in moderate power and switching applications.
- Reliable Current Gain: Offers a broad DC gain range (100?C320), ensuring consistent amplification performance for signal processing tasks.
- Compact SOT-23 Package: Facilitates high-density PCB layouts and automated assembly, increasing manufacturing efficiency.
- Wide Operating Temperature: Maintains stable operation from -55??C to +150??C, suitable for harsh industrial environments.
Typical Applications
- Signal amplification in low to medium power electronic circuits where stable gain and voltage ratings are crucial for precise control.
- Switching applications including driver stages in power management and interface circuits requiring fast switching speeds.
- General-purpose amplification in consumer and industrial electronics, including sensors and instrumentation systems.
- Embedded control and switching in automotive electronics where temperature resilience and reliability are mandatory.
BCR108E6433HTMA1 Advantages vs Typical Alternatives
This transistor offers enhanced voltage tolerance and a wide current gain range, outperforming many standard small-signal transistors. Its compact SOT-23 package supports surface-mount technology, enabling better integration and automated assembly compared to through-hole alternatives. Additionally, the extended temperature range ensures reliable function in demanding industrial settings, setting it apart from typical components with narrower thermal specifications.
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BCR108E6433HTMA1 Brand Info
The BCR108E6433HTMA1 is manufactured by ON Semiconductor, a global leader in power and signal management semiconductor solutions. ON Semiconductor is known for delivering high-quality, reliable components designed to meet the rigorous demands of industrial, automotive, and consumer applications. This product benefits from the company??s commitment to innovation, robust quality control, and extensive application support, ensuring dependable performance in complex electronic systems.
FAQ
What is the maximum collector current for this transistor?
The device supports a maximum collector current of 0.5 A, making it suitable for low to medium power amplification and switching tasks in various electronic applications.
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Can this transistor be used in high-temperature environments?
Yes, it operates reliably within a temperature range from -55??C up to +150??C, which makes it well-suited for harsh industrial and automotive environments requiring thermal resilience.
What package type does this transistor come in, and how does it affect assembly?
This transistor is housed in a SOT-23 surface-mount package, enabling compact PCB layouts and compatibility with automated pick-and-place assembly processes, improving manufacturing efficiency.
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What type of transistor is the BCR108E6433HTMA1?
It is an NPN bipolar junction transistor (BJT), commonly used for switching and amplification purposes in many electronic circuits.
