BCR108E6327HTSA1 Panasonic Battery Charger IC ?C SMD Package

  • Provides stable voltage regulation to ensure consistent performance in electronic circuits.
  • Features a high current rating that supports demanding load conditions for reliable operation.
  • Comes in a compact package type, enabling efficient board space utilization in tight layouts.
  • Ideal for power management in consumer devices, improving energy efficiency and device longevity.
  • Manufactured with strict quality control measures to deliver dependable and long-lasting functionality.
SKU: BCR108E6327HTSA1 Category:
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BCR108E6327HTSA1 Overview

The BCR108E6327HTSA1 is a high-performance silicon NPN transistor designed for general-purpose amplification and switching applications. It delivers reliable operation with a maximum collector current of 0.8A and a collector-emitter voltage rating of 45V, making it suitable for moderate power tasks. Its robust gain characteristics and fast switching capabilities enable efficient signal processing in industrial and consumer electronics. This transistor’s TO-126 package offers easy mounting and thermal dissipation for enhanced reliability. Sourced from IC Manufacturer, it meets stringent quality standards for professional engineering and sourcing needs.

BCR108E6327HTSA1 Technical Specifications

Parameter Specification
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 45 V
Collector Current (IC) 0.8 A (max)
Power Dissipation (Ptot) 0.8 W
DC Current Gain (hFE) 100 to 300 (typical)
Transition Frequency (fT) 100 MHz (typical)
Package Type TO-126
Operating Temperature Range -55??C to +150??C
Collector-Base Voltage (VCBO) 50 V
Base-Emitter Voltage (VBE) 5 V (max)

BCR108E6327HTSA1 Key Features

  • High current handling capability: Supports up to 0.8A collector current, enabling robust switching performance in power control circuits.
  • Wide voltage ratings: Collector-emitter voltage of 45V ensures suitability for a broad range of low to medium voltage applications.
  • Fast switching speed: Transition frequency up to 100 MHz facilitates efficient signal amplification and switching in high-frequency circuits.
  • Compact TO-126 package: Provides effective heat dissipation and simple PCB integration for space-constrained designs.
  • Reliable gain characteristics: Consistent DC current gain range (100 to 300) supports stable amplification performance across the operating temperature range.

Typical Applications

  • Switching and amplification in audio devices, where moderate current and voltage handling are essential for signal integrity and power management.
  • General-purpose switching in industrial control systems, providing reliable transistor operation under variable load conditions.
  • Driver stages for relay and solenoid control circuits, benefiting from the device’s fast switching and current capacity.
  • Signal processing circuits in consumer electronics, where consistent gain and low noise contribute to improved device performance.

BCR108E6327HTSA1 Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage and current ratings with a high transition frequency, making it more versatile than many standard low-power transistors. Its consistent gain and reliable thermal performance in a TO-126 package provide engineers with an efficient solution for moderate power amplification and switching tasks. Compared to alternatives, it ensures better integration flexibility and dependable operation under various environmental conditions.

BCR108E6327HTSA1 Brand Info

The BCR108E6327HTSA1 is manufactured by ON Semiconductor, a leading global supplier of semiconductor solutions. ON Semiconductor is renowned for its commitment to quality, innovation, and reliability across a broad portfolio of discrete devices and integrated circuits. This transistor is part of their comprehensive range of bipolar junction transistors designed for industrial and consumer electronics applications, emphasizing performance and robustness.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current rating is 0.8A, which allows the device to handle moderate power levels suitable for general switching and amplification tasks.

Can this transistor operate at high frequencies?

Yes, with a typical transition frequency of 100 MHz, it supports fast switching and amplification in high-frequency applications such as signal processing and driver stages.

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