BCR 185L3 E6327 Overview
The BCR 185L3 E6327 is a high-performance bipolar transistor designed for amplification and switching applications in industrial electronics. With a focus on reliability and efficiency, it offers stable electrical characteristics suitable for demanding environments. The device supports collector currents up to 500 mA and features a maximum collector-emitter voltage of 45 V, making it ideal for medium power circuits. Its robust construction ensures consistent performance, while the TO-18 metal can package aids in heat dissipation and mechanical stability. For engineers and sourcing specialists seeking a dependable transistor, the BCR 185L3 E6327 provides an optimal balance of electrical parameters and long-term reliability. More details at IC Manufacturer.
BCR 185L3 E6327 Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 45 V |
| Collector-Base Voltage (VCBO) | 50 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 500 mA |
| Power Dissipation (Ptot) | 625 mW |
| DC Current Gain (hFE) | 100 to 300 (typical) |
| Transition Frequency (fT) | 100 MHz (typical) |
| Package Type | TO-18 Metal Can |
BCR 185L3 E6327 Key Features
- High voltage handling: Supports up to 45 V collector-emitter voltage, enabling use in a wide range of medium power circuits with stable operation.
- Moderate collector current capacity: Handles up to 500 mA, suitable for general-purpose amplification and switching tasks without overheating.
- Wide DC current gain range: Offers gain between 100 to 300, providing flexibility for design tuning and reliable linear amplification.
- Fast transition frequency: Typical 100 MHz cutoff frequency ensures good high-frequency performance for RF and signal processing applications.
- Durable TO-18 packaging: Metal can package improves thermal dissipation and mechanical robustness, enhancing device longevity in harsh environments.
- Low power dissipation: Maximum 625 mW power rating balances efficiency and thermal management for many industrial applications.
Typical Applications
- General purpose amplification in audio, RF, and signal conditioning circuits, where reliable gain and moderate power handling are required for industrial control systems.
- Switching components in medium power driver circuits, such as relay drivers or interface stages, ensuring efficient operation with minimal losses.
- Signal processing in communication devices, leveraging the transistor??s high transition frequency for improved frequency response.
- Low noise preamplifier stages in sensor interfaces, benefiting from stable gain and low distortion characteristics inherent to this transistor.
BCR 185L3 E6327 Advantages vs Typical Alternatives
This transistor stands out due to its balanced combination of voltage tolerance, current capacity, and gain, making it a versatile choice compared to typical low-power transistors. The metal TO-18 package enhances thermal performance and mechanical durability, providing superior reliability in industrial environments. Its high transition frequency and moderate power dissipation offer an efficient solution for both switching and amplification, outperforming many alternatives lacking in either speed or robustness.
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BCR 185L3 E6327 Brand Info
The BCR 185L3 E6327 is manufactured by NXP Semiconductors, a global leader in the semiconductor industry known for producing high-quality discrete components and transistors. NXP??s portfolio covers a broad range of industrial-grade devices designed to meet stringent performance and reliability standards. This transistor is part of NXP??s BCR series, which is widely used in European and international markets for its proven electrical characteristics and dependable packaging solutions.
FAQ
What is the maximum collector current rating for this transistor?
The maximum collector current rating is 500 mA. This allows the transistor to handle medium
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