BCR 185F E6327 Overview
The BCR 185F E6327 is a phototransistor designed for precise light detection and signal conversion in industrial and consumer electronics. It features high sensitivity and fast response times, making it ideal for applications requiring reliable optical sensing. This device supports efficient integration into various circuit designs due to its compact package and stable electrical characteristics. Backed by robust manufacturing standards, the BCR 185F E6327 delivers consistent performance across temperature variations, ensuring dependable operation in demanding environments. For detailed technical data and sourcing options, visit IC Manufacturer.
BCR 185F E6327 Technical Specifications
| Parameter | Specification |
|---|---|
| Phototransistor Type | NPN Silicon Phototransistor |
| Collector-Emitter Voltage (VCE) | 30 V |
| Emitter-Collector Voltage (VEC) | 5 V |
| Collector Current (IC) | 50 mA max |
| Power Dissipation | 100 mW max |
| Response Time (Rise/Fall) | 5 ??s / 10 ??s typical |
| Spectral Sensitivity Peak | 940 nm (infrared region) |
| Operating Temperature Range | -25??C to +85??C |
| Package Type | TO-18 metal can |
BCR 185F E6327 Key Features
- High sensitivity phototransistor: Enables accurate detection of low-level infrared signals, improving sensor reliability in low-light conditions.
- Fast response times: Rise and fall times below 10 ??s facilitate quick switching, essential for high-speed optical communication and control systems.
- Robust voltage ratings: Supports collector-emitter voltage up to 30 V, allowing operation in diverse circuit configurations without risk of damage.
- Compact TO-18 package: Ensures easy integration into space-constrained designs while providing mechanical durability and thermal stability.
Typical Applications
- Infrared remote control receivers in consumer electronics, offering reliable signal detection and conversion at infrared wavelengths.
- Optical switches and sensors in industrial automation, where precise and fast response to light changes enhances machine control accuracy.
- Light barrier systems for object detection and counting, benefiting from the device??s fast switching and high sensitivity.
- Safety and security devices requiring consistent infrared sensing performance under varying environmental conditions.
BCR 185F E6327 Advantages vs Typical Alternatives
This phototransistor stands out by combining high sensitivity and fast response times with robust voltage tolerance, outperforming many standard infrared sensors. Its compact TO-18 metal can package offers superior thermal management and mechanical strength compared to plastic alternatives. These advantages contribute to enhanced reliability, easier integration, and improved signal accuracy in demanding industrial and consumer applications.
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BCR 185F E6327 Brand Info
The BCR 185F E6327 is a product from ON Semiconductor, a leading global supplier of semiconductor components known for quality and innovation. This phototransistor is part of their extensive portfolio of optoelectronic devices engineered to meet the needs of industrial, automotive, and consumer markets. ON Semiconductor ensures rigorous manufacturing standards and comprehensive technical support, making the BCR 185F E6327 a trusted choice for engineers and sourcing specialists worldwide.
FAQ
What type of phototransistor is the BCR 185F E6327?
The device is an NPN silicon phototransistor designed to detect infrared light, with a peak spectral sensitivity around 940 nm. This makes it suitable for typical infrared sensing applications such as remote controls and optical sensors.
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What are the maximum voltage and current ratings for this phototransistor?
The maximum collector-emitter voltage is 30 V, and the maximum collector current is 50 mA. These ratings provide flexibility for various circuit designs without risking device damage under normal operating conditions.





