BCR 158T E6327 Overview
The BCR 158T E6327 is a high-performance phototransistor designed for precise light detection and switching applications. Featuring a compact transistor outline and optimized spectral response, it delivers reliable operation across a wide range of industrial and consumer electronics environments. This device offers excellent sensitivity and fast response times, making it suitable for use in optical sensors, signal isolation, and light measurement systems. The robust design ensures stable performance under varying temperature conditions, supporting seamless integration in automated control and safety equipment. For detailed technical insights, visit IC Manufacturer.
BCR 158T E6327 Technical Specifications
| Parameter | Value |
|---|---|
| Device Type | Phototransistor |
| Package Style | Transistor Outline (TO-18) |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Emitter-Collector Voltage (VECO) | 5 V |
| Collector Current (IC) | 50 mA max |
| Power Dissipation | 150 mW |
| Spectral Sensitivity Peak | 890 nm (infrared) |
| Rise Time | 3 ??s |
| Fall Time | 4 ??s |
| Operating Temperature Range | -55 ??C to +100 ??C |
BCR 158T E6327 Key Features
- High Sensitivity Phototransistor enabling precise detection of near-infrared light, which benefits applications requiring accurate optical signal conversion.
- Compact TO-18 Package facilitates easy integration into tight circuit layouts, reducing design complexity and saving PCB space.
- Fast Switching Response with rise and fall times in microseconds, allowing for efficient signal processing in high-speed optoelectronic circuits.
- Wide Operating Temperature Range ensures reliable performance in harsh industrial environments, supporting durable and long-lasting system designs.
Typical Applications
- Optical sensor modules for light intensity measurement and object detection in automation and safety systems, where reliable phototransistor response is critical.
- Signal isolation and light-activated switching circuits requiring fast and accurate phototransistor operation.
- Consumer electronics such as remote control receivers and ambient light sensing, utilizing the device??s infrared sensitivity.
- Industrial instrumentation for non-contact measurement, benefiting from the component??s stable performance across temperature variations.
BCR 158T E6327 Advantages vs Typical Alternatives
This phototransistor provides superior sensitivity and faster switching times compared to standard photodiodes or other transistor types, ensuring more accurate light detection and improved signal integrity. Its compact TO-18 package allows easier integration in space-constrained designs. Furthermore, the wide operating temperature range and robust voltage ratings contribute to enhanced reliability and longevity in industrial environments, making it an optimal choice for demanding applications.
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BCR 158T E6327 Brand Info
The BCR 158T E6327 is manufactured by a leading semiconductor producer known for precision optoelectronic components. This product line is recognized for consistent quality, reliability, and performance in industrial and consumer applications. The manufacturer’s rigorous testing and quality assurance processes ensure that each unit meets stringent specifications for electrical and optical characteristics, supporting seamless integration into diverse electronic systems. Their commitment to innovation and customer support makes this phototransistor a trusted solution for engineers and designers worldwide.
FAQ
What is the maximum collector current rating for the BCR 158T E6327?
The maximum collector current for this device is 50 mA. Exceeding this limit can damage the phototransistor and degrade its performance, so it is essential to design circuits within this parameter for reliable operation.
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Can the device operate in high-temperature environments?
Yes, it supports an operating temperature range from -55 ??C up to +100 ??C, allowing it to function reliably in both low and elevated temperature conditions typical of industrial applications.
What is the peak spectral sensitivity wavelength of this phototransistor?
The device exhibits peak sensitivity at approximately 890 nm in the near-infrared spectrum, making it ideal





