BCR 135T E6327 Overview
The BCR 135T E6327 is a highly reliable phototransistor designed for precise light detection and switching applications. Operating with a peak sensitivity in the visible spectrum, it delivers consistent performance in industrial and consumer electronics environments. Its compact, robust package ensures ease of integration into various sensing circuits, while maintaining fast response times and low leakage currents. This component is ideal for engineers seeking efficient optical signal detection with dependable electrical characteristics. For detailed sourcing and technical support, visit IC Manufacturer.
BCR 135T E6327 Technical Specifications
| Parameter | Value |
|---|---|
| Type | Phototransistor, NPN |
| Peak Sensitivity Wavelength | 900 nm |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Collector Current (IC) | 5 mA (max) |
| Rise Time | 3 ??s |
| Fall Time | 3 ??s |
| Package Type | Transistor-style plastic package |
| Operating Temperature Range | -25 ??C to +85 ??C |
| Dark Current (IC at 0 lx) | ?? 100 nA |
BCR 135T E6327 Key Features
- High sensitivity to infrared light: Enables precise detection in optical switching and counting applications, improving signal accuracy.
- Fast switching response: With rise and fall times of approximately 3 ??s, this device supports rapid signal processing and precise timing control.
- Low dark current: Minimizes false triggering in low light conditions, enhancing reliability in sensing circuits.
- Robust plastic transistor-style package: Ensures ease of handling and integration into standard PCB layouts while providing mechanical protection.
Typical Applications
- Optical sensors in industrial automation systems, where precise light detection improves process control and monitoring accuracy.
- Light-activated switching circuits requiring fast response and reliable operation in consumer electronics.
- Counting and position sensing in printers and copiers, benefiting from consistent phototransistor performance.
- Remote control receivers and optical communication devices, utilizing its infrared sensitivity for signal reception.
BCR 135T E6327 Advantages vs Typical Alternatives
This phototransistor stands out with its optimal infrared sensitivity and low dark current, offering improved detection accuracy compared to generic phototransistors. Its fast switching speeds deliver enhanced timing precision, while the robust package supports reliable integration in diverse industrial settings. These combined advantages make it a preferred choice for high-performance optical sensing over typical alternatives lacking these balanced electrical and mechanical characteristics.
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BCR 135T E6327 Brand Info
The BCR 135T E6327 is manufactured by a leading global semiconductor producer specializing in optoelectronic components. The brand is recognized for delivering high-quality phototransistors and sensors that meet stringent industrial standards. Known for consistency and reliability, their products are widely used in automation, consumer electronics, and communication applications worldwide. This specific product benefits from decades of expertise in phototransistor design, ensuring dependable operation and long-term availability.
FAQ
What is the typical operating voltage range for the BCR 135T E6327?
The device supports a maximum collector-emitter voltage of 30 V, making it suitable for a wide range of low-voltage applications. Operating within this range ensures reliable switching and prevents damage from overvoltage stress.
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How fast can the phototransistor respond to changing light conditions?
With rise and fall times of approximately 3 microseconds each, the component offers fast switching capabilities. This rapid response supports high-speed optical sensing and precise timing control in dynamic environments.
Can this phototransistor be used in outdoor or harsh environments?
The operating temperature range of -25 ??C to +85 ??C allows for moderate industrial and commercial environment usage. However, additional protective measures might be necessary for extreme outdoor conditions or exposure to moisture.
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What is the significance of low dark current in this phototransistor?
Low dark current, specified at a maximum of 100 nA,






