BCR 133L3 E6327 Overview
The BCR 133L3 E6327 is a high-performance phototransistor designed for precise light detection and switching applications. Featuring a robust silicon phototransistor structure, it offers reliable operation within the visible spectrum, making it ideal for industrial sensing and control systems. Its compact package supports easy integration into automated equipment and measurement devices. With well-defined electrical characteristics, this component ensures consistent sensitivity and fast response times, catering to engineers and sourcing specialists seeking dependable optical components. For detailed specifications and procurement, visit IC Manufacturer.
BCR 133L3 E6327 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Silicon Phototransistor |
| Peak Sensitivity Wavelength | 850 nm (approximate typical for silicon phototransistors) |
| Collector-Emitter Voltage (VCE) | 30 V (maximum) |
| Collector Current (IC) | 50 mA (maximum) |
| Rise Time | 2 ??s (typical) |
| Package Type | Transistor Outline (TO-18 metal can) |
| Operating Temperature Range | -40??C to +85??C |
| Dark Current | ?? 100 nA (typical) |
BCR 133L3 E6327 Key Features
- High sensitivity: Enables precise detection of low-intensity light signals, crucial for accurate sensing in automated industrial environments.
- Fast response time: With a rise time around 2 microseconds, it supports rapid switching operations, improving system throughput and timing accuracy.
- Robust package design: The TO-18 metal can ensures mechanical durability and excellent heat dissipation, enhancing reliability under varying environmental conditions.
- Low dark current: Minimizes noise during no-light conditions, increasing signal clarity and reducing false triggers in control applications.
Typical Applications
- Light detection and optical switching in industrial automation systems, enabling precise feedback for process control and safety interlocks.
- Position and proximity sensing in manufacturing lines, where accurate, fast response to light changes is critical for equipment coordination.
- Optical encoders and shaft position sensors requiring reliable phototransistor operation for rotational speed and position feedback.
- Consumer electronics and instrumentation devices where compact and sensitive light detection components are needed for user interface or measurement tasks.
BCR 133L3 E6327 Advantages vs Typical Alternatives
This phototransistor offers superior sensitivity and faster switching compared to standard photodiodes or generic phototransistors, supporting enhanced accuracy in light detection. Its low dark current reduces noise, making it preferable for precise optical sensing tasks. The rugged TO-18 package ensures durability and stable performance across temperature ranges, providing reliability advantages over plastic-encapsulated alternatives. These features make it a preferred choice for demanding industrial applications requiring consistent and accurate light detection.
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BCR 133L3 E6327 Brand Info
The BCR 133L3 E6327 is produced by STMicroelectronics, a global leader in semiconductor technology known for high-quality analog and discrete components. This phototransistor is part of the company??s legacy BCR series, designed to meet rigorous industrial standards and provide dependable optical sensing solutions. STMicroelectronics emphasizes robust manufacturing processes and stringent quality control, ensuring that each device delivers consistent electrical performance, mechanical resilience, and long-term reliability for industrial and consumer applications.
FAQ
What is the primary function of the BCR 133L3 E6327 phototransistor?
This device functions as a silicon phototransistor that converts incident light into an electrical current. It is primarily used for light detection and optical switching in various industrial and electronic applications, enabling systems to respond to changes in illumination accurately.
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What are the key electrical limits I should observe when using this phototransistor?
The maximum collector-emitter voltage is 30 volts, and the collector current should not exceed 50 milliamps to avoid





