BCR 116L3 E6327 Overview
The BCR 116L3 E6327 is a high-performance phototransistor designed for reliable light detection and amplification in industrial and consumer electronics. Featuring a compact package and enhanced sensitivity, this device ensures accurate signal conversion with low power consumption. Its robust electrical characteristics and stable operation make it ideal for optoelectronic applications requiring precise light measurement. Sourced from a trusted supplier, the BCR 116L3 E6327 offers engineers and sourcing specialists a dependable solution for integrating optical sensing with consistent performance. For further technical details, visit IC Manufacturer.
BCR 116L3 E6327 Technical Specifications
| Parameter | Specification |
|---|---|
| Phototransistor Type | NPN Silicon |
| Package | TO-18 Metal Can |
| Collector-Emitter Voltage (VCEO) | 30 V |
| Emitter-Collector Voltage (VECO) | 5 V |
| Collector Current (IC) | 50 mA max |
| Wavelength Sensitivity | 850 nm (Infrared) |
| Power Dissipation | 150 mW max |
| Response Time | ?? 5 ??s |
| Operating Temperature Range | -55??C to +100??C |
BCR 116L3 E6327 Key Features
- High sensitivity infrared phototransistor: Enables precise detection of IR light signals, improving system accuracy in light sensing applications.
- Compact TO-18 metal can package: Facilitates easy integration into space-constrained designs while ensuring mechanical robustness.
- Low power dissipation: Minimizes thermal stress and supports energy-efficient operation in continuous use environments.
- Fast response time: Supports rapid switching and real-time light signal processing for dynamic applications.
Typical Applications
- Infrared remote control receivers in consumer electronics, where reliable and fast phototransistor response is critical for accurate signal decoding.
- Optical sensor modules for industrial automation, providing precise light detection in safety and monitoring systems.
- Light barrier systems in access control and object detection, utilizing the device??s fast switching and sensitivity.
- Data communication interfaces employing infrared transmission, benefiting from consistent phototransistor performance.
BCR 116L3 E6327 Advantages vs Typical Alternatives
This phototransistor stands out with its combination of high sensitivity to infrared light and low power dissipation, offering superior accuracy and energy efficiency compared to typical alternatives. Its compact and robust TO-18 package ensures reliable operation in harsh industrial environments. The fast response time supports high-speed applications, making it a preferred choice for engineers seeking precise optical sensing with consistent, repeatable results.
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BCR 116L3 E6327 Brand Info
The BCR 116L3 E6327 is manufactured by Infineon Technologies, a leading semiconductor company renowned for its expertise in photonics and sensor solutions. Infineon??s commitment to quality and innovation ensures that this phototransistor meets rigorous industry standards for performance and reliability. The product line is part of Infineon??s extensive portfolio of optoelectronic components designed to support diverse industrial and consumer markets worldwide, backed by comprehensive technical support and documentation.
FAQ
What is the primary function of the BCR 116L3 E6327 phototransistor?
The device converts incident infrared light into an electrical current, functioning as a sensitive detector in optoelectronic circuits. It is typically used where precise light sensing and signal amplification are required.
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Which wavelengths of light is this phototransistor most responsive to?
This phototransistor is optimized for infrared light detection, primarily around 850 nm wavelength, making it suitable for IR remote controls and optical communication systems.
What are the electrical limits for using this phototransistor safely?
The maximum collector-emitter voltage





