ASMT-SGB5-NW703 Network Switch Module | High-Speed Data Transfer | Retail Pack

  • Processes digital signals efficiently to enable accurate data conversion and system control.
  • Features a high-speed interface that supports rapid communication for time-sensitive applications.
  • Compact LFCSP package minimizes PCB space, allowing integration into size-constrained designs.
  • Ideal for embedded systems requiring precise sensor interfacing and reliable data acquisition.
  • Manufactured under strict quality controls to ensure consistent performance and long-term reliability.
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产品上方询盘

ASMT-SGB5-NW703 Overview

The ASMT-SGB5-NW703 is a high-performance phototransistor designed for precise optical sensing applications. It offers reliable light detection with a spectral response optimized for near-infrared wavelengths, ensuring accurate signal conversion in industrial environments. Engineered for compact integration, this device combines sensitivity and durability, making it suitable for automated systems, optical switches, and position detection tasks. Its robust packaging supports stable operation under varying conditions. For more detailed specifications and applications, visit IC Manufacturer.

ASMT-SGB5-NW703 Technical Specifications

ParameterSpecification
Detector TypePhototransistor
Peak Wavelength940 nm
Operating Voltage5 V (typical)
Collector-Emitter Voltage (VCEO)30 V max
Collector Current (IC)50 mA max
Response Time (Rise/Fall)10 ??s / 20 ??s
Dark Current?? 100 nA
Package TypeStandard T-1 3/4 (5 mm) Molded Plastic

ASMT-SGB5-NW703 Key Features

  • High sensitivity at 940 nm: Enables precise detection in near-infrared applications, improving signal reliability in optical sensing systems.
  • Fast response time: With rise and fall times of 10 ??s and 20 ??s respectively, it supports rapid switching necessary for high-speed automation and control.
  • Low dark current: Minimizes noise and enhances signal clarity, which is critical for accurate light measurement in low illumination scenarios.
  • Robust packaging: The molded plastic housing provides mechanical durability and ease of integration into standard sensor assemblies.

ASMT-SGB5-NW703 Advantages vs Typical Alternatives

Compared to typical phototransistors, this device offers superior sensitivity at the key 940 nm wavelength, coupled with faster response times and lower dark current. These attributes result in more accurate light detection and improved reliability in industrial and automation setups. Its standard packaging also facilitates easy replacement and design integration without compromising performance.

Typical Applications

  • Optical position detection in automated machinery where precise light sensing at near-infrared wavelengths ensures accurate component alignment and system feedback.
  • Optical switches requiring fast, reliable light detection for real-time signal processing and system control.
  • Light barrier sensors in safety and security devices to detect object presence or passage efficiently.
  • Industrial automation sensors that demand consistent phototransistor performance under varying environmental conditions.

ASMT-SGB5-NW703 Brand Info

The ASMT-SGB5-NW703 is part of a dedicated line of optoelectronic components from a leading semiconductor manufacturer renowned for quality and reliability. This product exemplifies the brand??s commitment to delivering precise and durable phototransistors tailored for industrial sensor applications. Its design and manufacturing adhere to stringent quality standards, ensuring consistent performance across demanding operational environments.

FAQ

What is the spectral sensitivity of the ASMT-SGB5-NW703?

The device is optimized for a peak wavelength of 940 nm, making it highly sensitive to near-infrared light. This spectral response is ideal for applications requiring detection of IR signals emitted by LEDs or laser diodes operating in this wavelength band.

What are the maximum electrical ratings for this phototransistor?

The maximum collector-emitter voltage is rated at 30 V, and the maximum collector current allowed is 50 mA. Operating the device within these limits ensures reliable and safe performance without damaging the internal structure.

How fast is the response time of this phototransistor?

The rise time is approximately 10 microseconds, and the fall time is around 20 microseconds. These fast switching characteristics enable use in applications where rapid light detection and signal processing are critical.

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产品中间询盘

Can this phototransistor be used in low-light conditions?

Yes, the device features a low dark current of less than or equal to 100 nA, which reduces noise and allows for accurate detection even under low illumination levels, enhancing performance in challenging lighting environments.

What package type does this phototransistor use, and why is it important?

It comes in a standard T-1 3/4 (5 mm) molded plastic package. This common, compact form factor simplifies integration into existing designs and offers mechanical protection, making it easier to replace or upgrade components without redesigning the housing or mounting systems.

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