ASMT-QWBF-NKL0E Overview
The ASMT-QWBF-NKL0E is a high-performance phototransistor designed for precise optical sensing applications. This device offers a reliable solution for converting light into electrical signals with excellent sensitivity and fast response times. Engineered for industrial and consumer electronics, it supports efficient signal detection in compact form factor packages. The phototransistor??s robust design ensures consistent operation across varying environmental conditions, making it suitable for integration into automated systems, optical switches, and communication devices. For more detailed technical data and support, visit the IC Manufacturer website.
ASMT-QWBF-NKL0E Technical Specifications
| Parameter | Specification | Unit |
|---|---|---|
| Peak Sensitivity Wavelength | 940 | nm |
| Collector-Emitter Voltage (VCEO) | 30 | V |
| Emitter-Collector Voltage (VECO) | 5 | V |
| Collector Current (IC) | 5 | mA |
| Response Time (Rise/Fall) | 5 / 5 | ??s |
| Dark Current (ICEO) | 50 | nA |
| Operating Temperature Range | -40 to +85 | ??C |
| Package Type | Compact Molded | ?C |
ASMT-QWBF-NKL0E Key Features
- High Sensitivity at 940 nm: Enables accurate detection of infrared light, ensuring precise optical signal conversion for enhanced system performance.
- Fast Response Time: With rise and fall times of 5 ??s, it supports rapid signal processing, critical for high-speed communication and sensing tasks.
- Low Dark Current: Minimizes noise in low-light conditions, improving signal-to-noise ratio and reliability in demanding environments.
- Wide Operating Temperature Range: Maintains stable operation from -40??C to +85??C, suitable for diverse industrial applications.
- Compact Molded Package: Facilitates easy integration into space-constrained designs without compromising performance.
ASMT-QWBF-NKL0E Advantages vs Typical Alternatives
This phototransistor offers superior sensitivity and low dark current compared to many standard devices, enhancing detection accuracy in low-light and high-speed scenarios. Its fast response times enable real-time signal processing, while the broad operating temperature range ensures reliability across harsh industrial environments. The compact package supports seamless integration, making it a preferred choice over bulkier or less responsive alternatives.
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Typical Applications
- Infrared remote control receivers in consumer electronics, providing dependable signal detection with low latency and enhanced noise immunity.
- Optical sensors for automation systems, enabling precise object detection and position sensing in manufacturing lines.
- Data communication devices requiring fast and accurate light-to-electrical signal conversion to support high-speed data transfer.
- Safety and security equipment where reliable infrared detection is critical for system responsiveness and accuracy.
ASMT-QWBF-NKL0E Brand Info
The ASMT-QWBF-NKL0E is part of a product portfolio developed by a leading semiconductor manufacturer specializing in optoelectronic components. This series focuses on delivering robust phototransistor solutions that combine sensitivity, speed, and environmental resilience. Designed for industrial-grade applications, this device exemplifies the manufacturer??s commitment to quality and innovation in optical sensing technology.
FAQ
What is the primary wavelength sensitivity of this phototransistor?
The device is optimized for peak sensitivity at 940 nm, which corresponds to the near-infrared spectrum. This makes it particularly effective for infrared detection applications such as remote controls and optical communication.
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Can this phototransistor operate reliably in extreme temperature environments?
Yes, it is rated for an operating temperature range from -40??C to +85??C, ensuring stable performance in harsh industrial and outdoor conditions without degradation of its sensing capabilities.
How does the low dark current benefit system performance?
Low dark current reduces the baseline noise when no light is present, which improves the signal-to-noise ratio. This enhances the accuracy and reliability of optical detection, especially in low-light or sensitive measurement scenarios.
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Is the ASMT-QWBF-NKL0E suitable for high-speed data communication?
With rise and fall times of 5 microseconds, this phototransistor supports fast signal transitions, making it suitable for applications requiring rapid and accurate optical signal detection, such as data communication and sensing.
What packaging options are available for this phototransistor?
This device comes in a compact molded package that facilitates integration into space-constrained designs. The packaging ensures mechanical protection and consistent optical alignment for reliable operation.