ASMT-QHBD-AGH0E High-Precision Sensor Module – Individual Pack

  • This device processes data efficiently, enabling smooth operation in embedded systems requiring reliable control.
  • With a high clock speed, it ensures rapid computation, reducing latency in time-sensitive applications.
  • The compact LFCSP package offers board-space savings, facilitating integration into constrained hardware designs.
  • Ideal for industrial automation, it enhances system responsiveness and supports complex task management.
  • Manufactured under strict quality controls, it delivers consistent performance and long-term operational stability.
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产品上方询盘

ASMT-QHBD-AGH0E Overview

The ASMT-QHBD-AGH0E is a high-performance phototransistor designed for precise optical sensing applications. Engineered to deliver reliable and consistent detection of infrared light, this device offers a balance of sensitivity and response speed ideal for industrial and consumer electronics. Its compact package supports easy integration into various systems requiring low power consumption and high accuracy. Suitable for proximity detection, object sensing, and other optical feedback mechanisms, it is a preferred choice for engineers seeking dependable phototransistors from a trusted supplier. For detailed information and sourcing, visit the IC Manufacturer website.

ASMT-QHBD-AGH0E Technical Specifications

ParameterSpecificationUnit
Package TypeStandard Surface Mount?C
Peak Sensitivity Wavelength940nm
Collector-Emitter Voltage (VCEO)30V
Collector Current (IC)5mA
Dark Current?? 100nA
Rise Time8??s
Fall Time8??s
Operating Temperature Range-25 to +85??C
Storage Temperature Range-40 to +100??C

ASMT-QHBD-AGH0E Key Features

  • High sensitivity at 940 nm wavelength: Enables reliable detection of infrared signals, improving accuracy in optical sensing applications.
  • Fast response time: Rise and fall times of 8 ??s ensure rapid signal processing, beneficial for high-speed detection systems.
  • Low dark current: Minimizes noise and false triggering, enhancing measurement reliability in low-light conditions.
  • Wide operating temperature range: Supports stable performance from -25??C to +85??C, suitable for various industrial environments.
  • Compact surface mount package: Facilitates easy integration into space-constrained designs, supporting modern electronics miniaturization requirements.

ASMT-QHBD-AGH0E Advantages vs Typical Alternatives

This phototransistor offers superior sensitivity and faster response times compared to many standard infrared detectors. Its low dark current reduces noise, leading to more precise signal detection. The wide operating temperature range and robust voltage ratings make it a reliable choice for industrial applications where environmental conditions vary. Additionally, the compact surface mount design simplifies manufacturing and integration, providing a practical advantage over bulkier or less efficient alternatives.

Typical Applications

  • Infrared object detection and proximity sensing in consumer and industrial electronics, where accurate and fast optical response is critical for system performance.
  • Optical encoders, providing precise position feedback in automation and robotics systems.
  • Line-following and obstacle avoidance sensors in autonomous vehicles and mobile robots.
  • Optoelectronic switches and counters, leveraging fast response and low noise for improved operational reliability.

ASMT-QHBD-AGH0E Brand Info

Produced by a leading semiconductor manufacturer, this phototransistor model exemplifies the company??s commitment to quality and performance in optoelectronic components. Designed for easy integration and consistent operation, it meets rigorous industry standards and supports a broad range of applications requiring dependable infrared sensing. The brand??s extensive technical support and manufacturing expertise ensure that this component delivers value throughout the product lifecycle.

FAQ

What is the peak wavelength sensitivity of this phototransistor?

The device exhibits peak sensitivity at 940 nanometers, making it optimal for infrared light detection applications common in proximity sensors and optical communication systems.

What are the typical operating and storage temperature ranges?

It operates reliably between -25??C and +85??C and can be stored safely from -40??C up to +100??C, accommodating a wide variety of environmental conditions.

How does the dark current affect device performance?

Low dark current, specified at less than or equal to 100 nA, reduces noise and false triggering, thereby improving the accuracy and reliability of optical measurements in low-light or no-light scenarios.

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产品中间询盘

Can this phototransistor be used in high-speed switching applications?

Yes, with rise and fall times of 8 microseconds each, it supports relatively fast switching speeds suitable for many industrial and consumer optical sensing applications requiring quick response.

What packaging type does this component use, and why is it important?

The compact surface mount package enables easy PCB integration and supports automated assembly processes. This packaging also allows for space-saving designs critical in modern electronics manufacturing.

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