AIKW50N65DF5XKSA1 Power MOSFET Transistor, 650V 50A, TO-247 Package

  • Designed for efficient power switching, enabling reliable operation in various electronic circuits.
  • Offers a maximum drain-source voltage of 650V, suitable for high-voltage power management tasks.
  • TO-247 package allows for effective heat dissipation and accommodates high current handling in compact layouts.
  • Commonly used in motor drives, this device helps improve system efficiency and control under demanding conditions.
  • Manufactured to support consistent performance and durability in long-term electronic applications.
SKU: AIKW50N65DF5XKSA1 Category: Brand:
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AIKW50N65DF5XKSA1 Overview

The AIKW50N65DF5XKSA1 is a high-performance insulated-gate bipolar transistor (IGBT) designed for demanding industrial and power electronics applications. With a focus on efficiency and robustness, this device delivers reliable switching performance and low conduction losses. Its advanced design makes it suitable for applications requiring high voltage and current handling, as well as excellent thermal stability. For engineers and procurement professionals seeking a dependable solution for power conversion or motor control, the AIKW50N65DF5XKSA1 offers a compelling mix of technical attributes and operational reliability. Learn more at IC Manufacturer.

AIKW50N65DF5XKSA1 Technical Specifications

Parameter Value
Part Number AIKW50N65DF5XKSA1
Device Type IGBT (Insulated-Gate Bipolar Transistor)
Collector-Emitter Voltage (VCES) 650 V
Collector Current 50 A
Configuration Single
Package / Case TO-247-3
Mounting Type Through Hole
Technology Field Stop, Trench
Operating Temperature Range -40??C to +150??C

AIKW50N65DF5XKSA1 Key Features

  • High collector-emitter voltage rating of 650 V enables use in high-voltage industrial power systems, supporting robust operation under demanding conditions.
  • Rated for a continuous collector current of 50 A, supporting high current loads in applications such as inverters and motor drives, which is crucial for power density and system flexibility.
  • Field Stop and Trench technology integration delivers low switching losses and improved efficiency, reducing total system energy consumption and enhancing thermal performance.
  • Offered in a TO-247-3 through-hole package, the device ensures easy integration into existing designs and promotes reliable heat dissipation for long-term stability.

AIKW50N65DF5XKSA1 Advantages vs Typical Alternatives

Compared to standard IGBT alternatives, this device stands out due to its advanced Field Stop and Trench design, which yields reduced switching and conduction losses. It supports higher voltage and current capabilities, ensuring more efficient operation and improved thermal management. These attributes, combined with robust packaging, make it ideal for reliable, high-power industrial applications.

Typical Applications

  • Industrial motor drives: The AIKW50N65DF5XKSA1 is well-suited for variable frequency drives and servo drives where high voltage isolation, efficient switching, and robust current handling are required for precise motor control and energy savings.
  • Power inverters: Used in solar inverters and UPS systems, it supports high efficiency and reliability for the conversion of DC to AC power in renewable energy and backup power environments.
  • Welding equipment: Its high current and voltage capabilities enable dependable operation in industrial welding machinery, where ruggedness and thermal stability are critical.
  • Uninterruptible power supplies (UPS): The device??s efficiency and reliability make it a preferred choice for UPS designs requiring fast response and sustained output under varying loads.

AIKW50N65DF5XKSA1 Brand Info

The AIKW50N65DF5XKSA1 is produced by a renowned manufacturer recognized for its innovation in power semiconductor technology. This product exemplifies the brand??s commitment to delivering efficient and reliable IGBT solutions for industrial power systems. Combining robust field stop and trench technology with a proven package format, the device is tailored for engineers seeking dependable performance in challenging environments. Its adoption across a range of power conversion and motor control applications highlights its versatility and the manufacturer??s expertise in advanced semiconductor design.

FAQ

What is the maximum collector-emitter voltage for the AIKW50N65DF5XKSA1?

The maximum collector-emitter voltage for this component is 650 V, making it suitable for high-voltage industrial and power electronics applications where robust isolation and safety are required.

What type of technology is used in this IGBT?

This device incorporates both Field Stop and Trench technology, which work together to reduce switching and conduction losses, thereby enhancing overall system efficiency and thermal performance in demanding power environments.

Which applications are ideal for deploying this device?

It is ideal for applications such as industrial motor drives, power inverters, welding equipment, and uninterruptible power supplies??situations demanding high current, voltage, and reliability under continuous operation.

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产品中间询盘

What package does the AIKW50N65DF5XKSA1 use, and what are its benefits?

The device comes in a TO-247-3 through-hole package, which provides mechanical robustness, efficient heat dissipation, and compatibility with standard PCB designs in industrial settings.

What operating temperature range can the device withstand?

This IGBT is rated for an operating temperature range from -40??C to +150??C, allowing it to function reliably in harsh and variable thermal environments commonly encountered in industrial applications.

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